Using the inelastic background in hard x-ray photoelectron spectroscopy for a depth-resolved analysis of the CdS/Cu(In,Ga)Se2interface

Dirk Hauschild*, Ralph Steininger, Dimitrios Hariskos, Wolfram Witte, Sven Tougaard, Clemens Heske, Lothar Weinhardt

*Corresponding author for this work

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Abstract

The inelastic background of hard x-ray photoelectron spectroscopy data is analyzed to paint a depth-resolved picture of the CdS/Cu(In,Ga)Se2 (CdS/CIGSe) layer structure. The CdS/CIGSe interface is the central component in next-generation chalcopyrite thin-film photovoltaic devices. By analyzing both, the (unscattered) core-level peaks and the inelastic background, and by varying the excitation photon energy from 2.1 up to 14 keV, we can derive photoemission information over a broad range of electron kinetic energies and, hence, sampling depths. With this complementary information, the CdS film thickness of a CdS/CIGSe interface can be accurately determined as a function of the CdS deposition time. For the thinner CdS films, the film thickness can be shown to vary laterally. Furthermore, small amounts of Se and process-related Rb can be detected in a thin (∼2 nm) surface layer of all investigated CdS films.

Original languageEnglish
Article number063216
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume39
Issue number6
Number of pages9
ISSN0734-2101
DOIs
Publication statusPublished - 1. Dec 2021

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