Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

André Luis Fernandes Cauduro; Zacarias Eduardo Fabrim; Mehrad  Ahmadpour; Paulo Fernando Papaleo Fichtner; Søren Hassing; Horst-Günter Rubahn; Morten Madsen

doi:10.1063/1.4921367

Tuning the optoelectronic properties of amorphous MoO_x films by reactive sputtering

André Luis Fernandes Cauduro, Zacarias Eduardo Fabrim, Mehrad Ahmadpour, Paulo Fernando Papaleo Fichtner, Søren Hassing, Horst-Günter Rubahn, Morten Madsen

Federal University of Rio Grande do Sul

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of the
reported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during the sputtering process. A strong impact on the electrical conductivity, varying from
1.6 ? 10?5 S/cm to 3.22 S/cm, and on the absorption coefficient in the range of 0.6–3.0 eV is observed for the nearly stoichiometric MoO3.00 and for the sub-stoichiometric MoO2.57 films, respectively, without modifying significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic properties in these films holds strong promise for their implementation in optoelectronic devices.

Original language	English
Article number	202101
Journal	Applied Physics Letters
Volume	106
Issue number	20
Number of pages	5
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.4921367
Publication status	Published - 18. May 2015

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10.1063/1.4921367

Fernandes Cauduro MoOx DC sputteringFinal published version, 1.25 MB

Cite this

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title = "Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering",

abstract = "In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of thereported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during the sputtering process. A strong impact on the electrical conductivity, varying from1.6 ? 10?5 S/cm to 3.22 S/cm, and on the absorption coefficient in the range of 0.6–3.0 eV is observed for the nearly stoichiometric MoO3.00 and for the sub-stoichiometric MoO2.57 films, respectively, without modifying significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic properties in these films holds strong promise for their implementation in optoelectronic devices.",

author = "{Fernandes Cauduro}, {Andr{\'e} Luis} and Fabrim, {Zacarias Eduardo} and Mehrad Ahmadpour and {Papaleo Fichtner}, {Paulo Fernando} and S{\o}ren Hassing and Horst-G{\"u}nter Rubahn and Morten Madsen",

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T1 - Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

AU - Fernandes Cauduro, André Luis

AU - Fabrim, Zacarias Eduardo

AU - Ahmadpour, Mehrad

AU - Papaleo Fichtner, Paulo Fernando

AU - Hassing, Søren

AU - Rubahn, Horst-Günter

AU - Madsen, Morten

PY - 2015/5/18

Y1 - 2015/5/18

N2 - In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of thereported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during the sputtering process. A strong impact on the electrical conductivity, varying from1.6 ? 10?5 S/cm to 3.22 S/cm, and on the absorption coefficient in the range of 0.6–3.0 eV is observed for the nearly stoichiometric MoO3.00 and for the sub-stoichiometric MoO2.57 films, respectively, without modifying significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic properties in these films holds strong promise for their implementation in optoelectronic devices.

AB - In this letter, we report on the effect of oxygen partial pressure and sputtering power on amorphous DC-sputtered MoOx films. We observe abrupt changes in the optoelectronic properties of thereported films by increasing the oxygen partial pressure from 1.00 ? 10?3 mbar to 1.37 ? 10?3 mbar during the sputtering process. A strong impact on the electrical conductivity, varying from1.6 ? 10?5 S/cm to 3.22 S/cm, and on the absorption coefficient in the range of 0.6–3.0 eV is observed for the nearly stoichiometric MoO3.00 and for the sub-stoichiometric MoO2.57 films, respectively, without modifying significantly the microstructure of the studied films. The presence of states within the band gap due to the lack of oxygen is the most probable mechanism for generat- ing a change in electrical conductivity as well as optical absorption in DC-sputtered MoOx. The large tuning range of the optoelectronic properties in these films holds strong promise for their implementation in optoelectronic devices.

U2 - 10.1063/1.4921367

DO - 10.1063/1.4921367

M3 - Journal article

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202101

ER -

Tuning the optoelectronic properties of amorphous MoOx films by reactive sputtering

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Tuning the optoelectronic properties of amorphous MoO_x films by reactive sputtering