Substrate effects in graphene field-effect transistor photodetectors

K. V. Voronin; G. A. Ermolaev; Y. V. Stebunov; A. V. Arsenin; A. N. Bylinkin; B. B.E. Jensen; B. Jørgensen; V. S. Volkov

doi:10.1088/1742-6596/1461/1/012188

Substrate effects in graphene field-effect transistor photodetectors

K. V. Voronin, G. A. Ermolaev, Y. V. Stebunov, A. V. Arsenin, A. N. Bylinkin, B. B.E. Jensen, B. Jørgensen, V. S. Volkov

Research output: Contribution to journal › Conference article › Research › peer-review

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Abstract

In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We demonstrate that the understanding of the processes occurring in the substrate is of high importance not only for the development of all types of photodetectors based on field-effect transistors, but also could be used for the designing of devices with novel functionalities.

Original language	English
Article number	012188
Book series	Journal of Physics: Conference Series
Volume	1461
ISSN	1742-6588
DOIs	https://doi.org/10.1088/1742-6596/1461/1/012188
Publication status	Published - 23. Apr 2020
Event	4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 - St. Petersburg, Russian Federation Duration: 15. Jul 2019 → 19. Jul 2019

Conference

Conference	4th International Conference on Metamaterials and Nanophotonics, METANANO 2019
Country/Territory	Russian Federation
City	St. Petersburg
Period	15/07/2019 → 19/07/2019
Sponsor	Bruker, INSCIENCE

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10.1088/1742-6596/1461/1/012188Licence: CC BY

Open Access VersionFinal published version, 2.88 MBLicence: CC BY

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title = "Substrate effects in graphene field-effect transistor photodetectors",

abstract = "In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We demonstrate that the understanding of the processes occurring in the substrate is of high importance not only for the development of all types of photodetectors based on field-effect transistors, but also could be used for the designing of devices with novel functionalities.",

author = "Voronin, {K. V.} and Ermolaev, {G. A.} and Stebunov, {Y. V.} and Arsenin, {A. V.} and Bylinkin, {A. N.} and Jensen, {B. B.E.} and B. J{\o}rgensen and Volkov, {V. S.}",

year = "2020",

month = apr,

day = "23",

doi = "10.1088/1742-6596/1461/1/012188",

language = "English",

volume = "1461",

journal = "Journal of Physics: Conference Series (Online)",

issn = "1742-6596",

publisher = "IOP Publishing",

note = "4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 ; Conference date: 15-07-2019 Through 19-07-2019",

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TY - GEN

T1 - Substrate effects in graphene field-effect transistor photodetectors

AU - Voronin, K. V.

AU - Ermolaev, G. A.

AU - Stebunov, Y. V.

AU - Arsenin, A. V.

AU - Bylinkin, A. N.

AU - Jensen, B. B.E.

AU - Jørgensen, B.

AU - Volkov, V. S.

PY - 2020/4/23

Y1 - 2020/4/23

N2 - In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We demonstrate that the understanding of the processes occurring in the substrate is of high importance not only for the development of all types of photodetectors based on field-effect transistors, but also could be used for the designing of devices with novel functionalities.

AB - In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We demonstrate that the understanding of the processes occurring in the substrate is of high importance not only for the development of all types of photodetectors based on field-effect transistors, but also could be used for the designing of devices with novel functionalities.

U2 - 10.1088/1742-6596/1461/1/012188

DO - 10.1088/1742-6596/1461/1/012188

M3 - Conference article

AN - SCOPUS:85084139884

SN - 1742-6596

VL - 1461

JO - Journal of Physics: Conference Series (Online)

JF - Journal of Physics: Conference Series (Online)

M1 - 012188

T2 - 4th International Conference on Metamaterials and Nanophotonics, METANANO 2019

Y2 - 15 July 2019 through 19 July 2019

ER -

Substrate effects in graphene field-effect transistor photodetectors

Abstract

Conference

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