Study on Resonant Gate Driver circuits for high frequency applications

Jaya Venkata Phani Sekhar Chennu, Ramkrishan Maheshwari

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper presents an overview on advantages and limitations of existing resonant gate drivers for the high-frequency applications. Conventional gate drive circuits dissipate energy in gate resistance and this energy is independent of gate resistance. Instead of dissipating all the energy, some of the energy can be recovered or recycled using the principle of resonance. This paper analyzes various gate drive circuits and presents their advantages and limitations. The gate drive circuits are simulated on LTspice Simulation Software. Simulation results are presented to show the effectiveness of the analysis.

Original languageEnglish
Title of host publication2016 IEEE 6th International Conference on Power Systems, ICPS 2016
PublisherIEEE
Publication date5. Oct 2016
Article number7584074
ISBN (Electronic)9781509001286
DOIs
Publication statusPublished - 5. Oct 2016
Event6th IEEE International Conference on Power Systems, ICPS 2016 - New Delhi, India
Duration: 4. Mar 20166. Mar 2016

Conference

Conference6th IEEE International Conference on Power Systems, ICPS 2016
Country/TerritoryIndia
CityNew Delhi
Period04/03/201606/03/2016
SponsorBSES Yamuna Power Limited, Department of Science and Technology Govt. of India, DynaFusion, et al., IEEE, Semikron

Keywords

  • Gate-energy recovery
  • Gate-energy recycling
  • High frequency
  • IGBT gate drive
  • Low power consumption
  • MOSFET gate drive
  • Resonant gate driver

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