Abstract
This paper presents an overview on advantages and limitations of existing resonant gate drivers for the high-frequency applications. Conventional gate drive circuits dissipate energy in gate resistance and this energy is independent of gate resistance. Instead of dissipating all the energy, some of the energy can be recovered or recycled using the principle of resonance. This paper analyzes various gate drive circuits and presents their advantages and limitations. The gate drive circuits are simulated on LTspice Simulation Software. Simulation results are presented to show the effectiveness of the analysis.
Original language | English |
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Title of host publication | 2016 IEEE 6th International Conference on Power Systems, ICPS 2016 |
Publisher | IEEE |
Publication date | 5. Oct 2016 |
Article number | 7584074 |
ISBN (Electronic) | 9781509001286 |
DOIs | |
Publication status | Published - 5. Oct 2016 |
Event | 6th IEEE International Conference on Power Systems, ICPS 2016 - New Delhi, India Duration: 4. Mar 2016 → 6. Mar 2016 |
Conference
Conference | 6th IEEE International Conference on Power Systems, ICPS 2016 |
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Country/Territory | India |
City | New Delhi |
Period | 04/03/2016 → 06/03/2016 |
Sponsor | BSES Yamuna Power Limited, Department of Science and Technology Govt. of India, DynaFusion, et al., IEEE, Semikron |
Keywords
- Gate-energy recovery
- Gate-energy recycling
- High frequency
- IGBT gate drive
- Low power consumption
- MOSFET gate drive
- Resonant gate driver