Abstract
High efficiency and high power density are two desirable criteria in the design of power electronics converters. With the recent advent of wide bandgap semiconductor materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), the efficiency and power density of the power converters are further improved. This paper compares the efficiency and volume of three different 1kW, 55V/70V boost converter based battery discharge regulators which are designed and developed using Silicon (Si) MOSFETs, SiC MOSFETs, and GaN MOSFETs, respectively. The efficiency and volume of these converters are optimized by selecting the switching frequency judiciously. The variations in the selected optimal switching frequency for different switching devices are also highlighted in this paper.
| Original language | English |
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| Title of host publication | 2019 International Conference on Computing, Power and Communication Technologies, GUCON 2019 |
| Editors | Rabindra Nath Shaw, Pratima Walde |
| Number of pages | 7 |
| Publisher | IEEE |
| Publication date | Sept 2019 |
| Pages | 524-530 |
| Article number | 8940543 |
| ISBN (Electronic) | 9789353510985 |
| Publication status | Published - Sept 2019 |
| Externally published | Yes |
| Event | 2019 International Conference on Computing, Power and Communication Technologies, GUCON 2019 - Greater Noida, India Duration: 27. Sept 2019 → 28. Sept 2019 |
Conference
| Conference | 2019 International Conference on Computing, Power and Communication Technologies, GUCON 2019 |
|---|---|
| Country/Territory | India |
| City | Greater Noida |
| Period | 27/09/2019 → 28/09/2019 |
Keywords
- Battery Discharge Regulator
- Boost Converter
- Efficiency
- Gallium Nitride
- Power density
- Silicon Carbide
- Switching frequency
- Wide-Bangap