Penetration of flourine into the silicon lattice during exposure to F atoms, F2, and XeF2: Implications for spontaneous etching reactions

Penetration of flourine into the silicon lattice during exposure to F atoms, F₂, and XeF₂: Implications for spontaneous etching reactions

Research output: Contribution to journal › Journal article › Research › peer-review

Original language	English
Journal	Journal of Vacuum Science & Technology A
Volume	A 25
Pages (from-to)	96-103
ISSN	0734-2101
Publication status	Published - 2007

@article{5b8aeb30ff1111dc86ef000ea68e967b,

title = "Penetration of flourine into the silicon lattice during exposure to F atoms, F2, and XeF2: Implications for spontaneous etching reactions",

author = "Sven Tougaard",

year = "2007",

language = "English",

volume = "A 25",

pages = "96--103",

journal = "Journal of Vacuum Science \& Technology A",

issn = "0734-2101",

publisher = "American Institute of Physics",

}