Optimize parameters of new fabricated n-CdTe/p-CdTe solar cell

A. Geravand, S. Sharbati, M. Danaie

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this investigation, a new fabricated thin film solar cell with FTO/n-CdS/n-CdTe/p-CdTe/Au structure is modeled. The modeled device is compared with experimental data. Bring in n-CdTe at front of the absorber separate main electric field (buried junction) from heterojunction. Parameters of this new structure is optimized by physical analyses to achieve highest efficiency. The investigated properties in this structure are included: position of n-CdTe/p-CdTe buried junction, doping density of n-CdTe and p-CdTe layers. The efficiency of n-CdTe/p-CdTe cell improves from 15.3% to 19.7%, by optimization of buried junction position and doping density of absorber layers.
Original languageEnglish
Title of host publication2017 25th Iranian Conference on Electrical Engineering, ICEE 2017
PublisherIEEE
Publication date19. Jul 2017
Pages412-416
Article number7985484
ISBN (Print)978-1-5090-5964-5
ISBN (Electronic)9781509059638
DOIs
Publication statusPublished - 19. Jul 2017
Externally publishedYes
Event2017 Iranian Conference on Electrical Engineering - Tehran, Iran, Islamic Republic of
Duration: 2. May 20174. May 2017

Conference

Conference2017 Iranian Conference on Electrical Engineering
Country/TerritoryIran, Islamic Republic of
CityTehran
Period02/05/201704/05/2017

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