Operation and efficiency analysis of a five-level single-phase hybrid Si/SiC active neutral point clamped converter

Mohammad Najjar*, Mahdi Shahparasti, Alireza Kouchaki, Morten Nymand

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

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Abstract

The ability to improve both the size and efficiency of multilevel single-phase converters is a key to uplift them as an attractive solution for industries, while the high number of switches and complex modulation techniques understandably make them unattractive. Five-level active neutral point clamped (ANPC) converter, due to its inherent advantages such as employing different switching frequencies and using different switch technologies, presents an ideal candidate for study. This article performs a comprehensive analysis of the converter to highlight the advantages of it. This analysis results in a modified hybrid modulation that effectively regulates the neutral point (NP) of the dc link. Consequently, the combination of the topology and the modified modulation make the converter ideal to utilize two different switch technologies - in this article, silicon carbide (SiC) and Si MOSFET. To evaluate the analysis and the effectiveness of modulation, a 2-kW hybrid five-level ANPC is built. The converter current behavior is analyzed to determine the power loss in the filter and switches. The efficiency measurement is performed and compared with the calculated efficiency. There is a close coherency between the measurement and the calculated results and a peak efficiency of 98.4% is achieved.

Original languageEnglish
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Volume10
Issue number1
Pages (from-to) 662-672
ISSN2168-6777
DOIs
Publication statusPublished - 1. Feb 2022

Keywords

  • Capacitors
  • Efficiency
  • Five-level inverter
  • Semiconductor diodes
  • SiC metal oxide semiconductor field effect transistor (MOSFET)
  • Silicon carbide
  • Single phase
  • Space vector pulse width modulation
  • Switches
  • Switching frequency
  • Topology
  • Voltage control
  • silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET)
  • five-level inverter
  • space vector pulse width modulation
  • single phase

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