Numerical analysis on effects of experimental Ga Grading on Cu(In,Ga)Se2 solar cell performance

Yiming Liu, B. Li, S. Lin, W. Liu, Jost Adam, Morten Madsen, Horst-Günter Rubahn, Y. Sun

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The Ga gradient optimization is an important subject in the studies of Cu(In 1-x,Ga x)Se 2 (CIGS) solar cells, and numerical simulation has been demonstrated as an informative approach to investigate the effects of Ga grading profiles on device performance. The Ga grading profiles modeled in previous studies are mostly based on simplified piecewise linear structures, few simulation works treat the real experimental Ga gradient directly. In this paper, we present a theoretical method that allows for the inclusion of experimentally obtained Ga grading profiles as a modeling input, and from that compare the modeling results of several CIGS samples with experimental device data. It is found that the non-uniformity of carrier mobility needs to be considered in the model for cells having different grain sizes across the whole CIGS film. Besides the effects of the Ga gradient profile, additional factors including crystalline qualities should be considered to obtain modeling results consistent with experimental observation. The modeling approach implemented in this work improves numerical models to attain better predictability of the simulation, and provides deeper insights into the effects of Ga gradient profiles on real CIGS solar cells, which is helpful for extracting more information from interpreting the experimental data.

Original languageEnglish
JournalJournal of Physics and Chemistry of Solids
Volume120
Pages (from-to)190-196
ISSN0022-3697
DOIs
Publication statusPublished - 2018

Fingerprint

numerical analysis
Numerical analysis
Solar cells
solar cells
profiles
gradients
Carrier mobility
Numerical models
simulation
Crystalline materials
carrier mobility
nonuniformity
Computer simulation
grain size
inclusions
optimization
cells

Keywords

  • CIGS solar cells
  • Ga grading
  • Simulation

Cite this

@article{15d2c45e571c48d69982f002f11a81b2,
title = "Numerical analysis on effects of experimental Ga Grading on Cu(In,Ga)Se2 solar cell performance",
abstract = "The Ga gradient optimization is an important subject in the studies of Cu(In 1-x,Ga x)Se 2 (CIGS) solar cells, and numerical simulation has been demonstrated as an informative approach to investigate the effects of Ga grading profiles on device performance. The Ga grading profiles modeled in previous studies are mostly based on simplified piecewise linear structures, few simulation works treat the real experimental Ga gradient directly. In this paper, we present a theoretical method that allows for the inclusion of experimentally obtained Ga grading profiles as a modeling input, and from that compare the modeling results of several CIGS samples with experimental device data. It is found that the non-uniformity of carrier mobility needs to be considered in the model for cells having different grain sizes across the whole CIGS film. Besides the effects of the Ga gradient profile, additional factors including crystalline qualities should be considered to obtain modeling results consistent with experimental observation. The modeling approach implemented in this work improves numerical models to attain better predictability of the simulation, and provides deeper insights into the effects of Ga gradient profiles on real CIGS solar cells, which is helpful for extracting more information from interpreting the experimental data.",
keywords = "CIGS solar cells, Ga grading, Simulation",
author = "Yiming Liu and B. Li and S. Lin and W. Liu and Jost Adam and Morten Madsen and Horst-G{\"u}nter Rubahn and Y. Sun",
year = "2018",
doi = "10.1016/j.jpcs.2018.04.041",
language = "English",
volume = "120",
pages = "190--196",
journal = "Journal of Physics and Chemistry of Solids",
issn = "0022-3697",
publisher = "Pergamon Press",

}

Numerical analysis on effects of experimental Ga Grading on Cu(In,Ga)Se2 solar cell performance. / Liu, Yiming; Li, B.; Lin, S.; Liu, W.; Adam, Jost; Madsen, Morten; Rubahn, Horst-Günter; Sun, Y.

In: Journal of Physics and Chemistry of Solids, Vol. 120, 2018, p. 190-196.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Numerical analysis on effects of experimental Ga Grading on Cu(In,Ga)Se2 solar cell performance

AU - Liu, Yiming

AU - Li, B.

AU - Lin, S.

AU - Liu, W.

AU - Adam, Jost

AU - Madsen, Morten

AU - Rubahn, Horst-Günter

AU - Sun, Y.

PY - 2018

Y1 - 2018

N2 - The Ga gradient optimization is an important subject in the studies of Cu(In 1-x,Ga x)Se 2 (CIGS) solar cells, and numerical simulation has been demonstrated as an informative approach to investigate the effects of Ga grading profiles on device performance. The Ga grading profiles modeled in previous studies are mostly based on simplified piecewise linear structures, few simulation works treat the real experimental Ga gradient directly. In this paper, we present a theoretical method that allows for the inclusion of experimentally obtained Ga grading profiles as a modeling input, and from that compare the modeling results of several CIGS samples with experimental device data. It is found that the non-uniformity of carrier mobility needs to be considered in the model for cells having different grain sizes across the whole CIGS film. Besides the effects of the Ga gradient profile, additional factors including crystalline qualities should be considered to obtain modeling results consistent with experimental observation. The modeling approach implemented in this work improves numerical models to attain better predictability of the simulation, and provides deeper insights into the effects of Ga gradient profiles on real CIGS solar cells, which is helpful for extracting more information from interpreting the experimental data.

AB - The Ga gradient optimization is an important subject in the studies of Cu(In 1-x,Ga x)Se 2 (CIGS) solar cells, and numerical simulation has been demonstrated as an informative approach to investigate the effects of Ga grading profiles on device performance. The Ga grading profiles modeled in previous studies are mostly based on simplified piecewise linear structures, few simulation works treat the real experimental Ga gradient directly. In this paper, we present a theoretical method that allows for the inclusion of experimentally obtained Ga grading profiles as a modeling input, and from that compare the modeling results of several CIGS samples with experimental device data. It is found that the non-uniformity of carrier mobility needs to be considered in the model for cells having different grain sizes across the whole CIGS film. Besides the effects of the Ga gradient profile, additional factors including crystalline qualities should be considered to obtain modeling results consistent with experimental observation. The modeling approach implemented in this work improves numerical models to attain better predictability of the simulation, and provides deeper insights into the effects of Ga gradient profiles on real CIGS solar cells, which is helpful for extracting more information from interpreting the experimental data.

KW - CIGS solar cells

KW - Ga grading

KW - Simulation

U2 - 10.1016/j.jpcs.2018.04.041

DO - 10.1016/j.jpcs.2018.04.041

M3 - Journal article

VL - 120

SP - 190

EP - 196

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

SN - 0022-3697

ER -