Magnetoresistance of electrochemically produced InSb

Classical geometric effects in disordered and inhomogeneous polycrystalline narrow bandgap semiconductors can lead to high, non-saturating, linear magnetoresistance (MR) values. It has been previously shown that polycrystalline networks of InSb produced by grinding an InSb single crystal have a large, linear, non-saturating magnetoresistance of several hundred per cent. InSb produced via electrochemical routes has not been characterised regarding their magnetoresistive response yet. Starting from a material produced by an electroless solution-phase reaction, we demonstrate that despite small crystallite size and inhomogeneous material composition, a similar effect leading to a high, linear and non-saturating MR of up to 150% can be observed. A range of InSb thin films produced via electrodeposition show much lower MR values of ∼2% and a non-linear magnetic field dependence probably due to resulting microstructure and use of a conductive substrate.