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Abstract
In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.
Original language | English |
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Title of host publication | 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 |
Number of pages | 5 |
Publisher | IEEE |
Publication date | 10. Oct 2019 |
ISBN (Electronic) | 978-1-7281-3202-0, 978-1-7281-3201-3, 978-1-7281-3203-7 |
DOIs | |
Publication status | Published - 10. Oct 2019 |
Event | 13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 - University of Southern Denmark, Sønderborg, Denmark Duration: 23. Apr 2019 → 25. Apr 2019 http://www.cpe-powereng.gov |
Conference
Conference | 13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 |
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Location | University of Southern Denmark |
Country/Territory | Denmark |
City | Sønderborg |
Period | 23/04/2019 → 25/04/2019 |
Sponsor | IEEE Industrial Electronics Society, The Institute of Electrical and Electronics Engineers (IEEE), University of Southern Denmark |
Internet address |
Keywords
- high-speed electrical motor drives
- loss calculation
- Si IGBT
- Si MOSFET
- SiC Scottky diode
- SiC MOSFET
- analytical calculations
- simulations
- Loss calculation
- SiC Schottky diode
- Simulations
- High-speed electrical motor drives
- Analytical calculations
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