Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

Giorgo Kapino; Toke Franke

doi:10.1109/CPE.2019.8862397

Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.

Original language	English
Title of host publication	2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
Number of pages	5
Publisher	IEEE
Publication date	10. Oct 2019
ISBN (Electronic)	978-1-7281-3202-0, 978-1-7281-3201-3, 978-1-7281-3203-7
DOIs	https://doi.org/10.1109/CPE.2019.8862397
Publication status	Published - 10. Oct 2019
Event	13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 - University of Southern Denmark, Sønderborg, Denmark Duration: 23. Apr 2019 → 25. Apr 2019 http://www.cpe-powereng.gov

Conference

Conference	13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019
Location	University of Southern Denmark
Country/Territory	Denmark
City	Sønderborg
Period	23/04/2019 → 25/04/2019
Sponsor	IEEE Industrial Electronics Society, The Institute of Electrical and Electronics Engineers (IEEE), University of Southern Denmark
Internet address	http://www.cpe-powereng.gov

Keywords

high-speed electrical motor drives
loss calculation
Si IGBT
Si MOSFET
SiC Scottky diode
SiC MOSFET
analytical calculations
simulations
Loss calculation
SiC Schottky diode
Simulations
High-speed electrical motor drives
Analytical calculations

Documents & Links

10.1109/CPE.2019.8862397

1 Finished

High Speed Drives
Franke, W. & Kapino, G.
01/08/2018 → 31/07/2021
Project: PhD Project

Cite this

@inproceedings{9c3a1c0074994d64bb2e102019d7ecac,

title = "Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application",

abstract = "In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.",

keywords = "high-speed electrical motor drives, loss calculation, Si IGBT, Si MOSFET, SiC Scottky diode, SiC MOSFET, analytical calculations, simulations, Loss calculation, SiC Schottky diode, Simulations, High-speed electrical motor drives, Analytical calculations",

author = "Giorgo Kapino and Toke Franke",

year = "2019",

month = oct,

day = "10",

doi = "10.1109/CPE.2019.8862397",

language = "English",

booktitle = "2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019",

publisher = "IEEE",

address = "United States",

note = "13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019 ; Conference date: 23-04-2019 Through 25-04-2019",

url = "http://www.cpe-powereng.gov",

}

Kapino, G & Franke, T 2019, Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. in 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE, 13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019, Sønderborg, Denmark, 23/04/2019. https://doi.org/10.1109/CPE.2019.8862397

Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application. / Kapino, Giorgo ; Franke, Toke.

2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019. IEEE, 2019.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

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AU - Franke, Toke

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N2 - In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.

AB - In this paper, a loss comparison is performed between different semiconductor switching devices for a three-phase voltage source inverter (VSI). A two-level VSI is used for a high-speed electrical motor drive application. The topology is examined using Silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFET), Si insulated-gate bipolar transistors (IGBT) with a Silicon Carbide (SiC) anti-parallel Schottky diode and SiC MOSFETs. The comparison is done in regards to the total (conduction and switching) loss and efficiency.

KW - high-speed electrical motor drives

KW - loss calculation

KW - Si IGBT

KW - Si MOSFET

KW - SiC Scottky diode

KW - SiC MOSFET

KW - analytical calculations

KW - simulations

KW - Loss calculation

KW - SiC Schottky diode

KW - Simulations

KW - High-speed electrical motor drives

KW - Analytical calculations

U2 - 10.1109/CPE.2019.8862397

DO - 10.1109/CPE.2019.8862397

M3 - Article in proceedings

BT - 2019 IEEE 13th International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019

PB - IEEE

T2 - 13th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, CPE-POWERENG 2019

Y2 - 23 April 2019 through 25 April 2019

ER -

Loss Comparison for Different Technologies of Semiconductors for Electrical Drive Motor Application

Abstract

Conference

Keywords

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High Speed Drives

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