Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

S. Sharbati, M. Fathipour

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.
Original languageEnglish
Title of host publication2009 International Semiconductor Device Research Symposium, ISDRS '09
PublisherIEEE
Publication date2009
Article number11060188
ISBN (Print)978-1-4244-6030-4
ISBN (Electronic)978-1-4244-6031-1
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International Semiconductor Device Research Symposium - College Park, United States
Duration: 9. Dec 200911. Dec 2009

Conference

Conference2009 International Semiconductor Device Research Symposium
Country/TerritoryUnited States
CityCollege Park
Period09/12/200911/12/2009

Fingerprint

Dive into the research topics of 'Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs'. Together they form a unique fingerprint.

Cite this