Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

S. Sharbati; M. Fathipour

doi:10.1109/ISDRS.2009.5378321

Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
Publisher	IEEE
Publication date	2009
Article number	11060188
ISBN (Print)	978-1-4244-6030-4
ISBN (Electronic)	978-1-4244-6031-1
DOIs	https://doi.org/10.1109/ISDRS.2009.5378321
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Semiconductor Device Research Symposium - College Park, United States Duration: 9. Dec 2009 → 11. Dec 2009

Conference

Conference	2009 International Semiconductor Device Research Symposium
Country/Territory	United States
City	College Park
Period	09/12/2009 → 11/12/2009

Documents & Links

10.1109/ISDRS.2009.5378321

Cite this

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title = "Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs",

abstract = "Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.",

author = "S. Sharbati and M. Fathipour",

year = "2009",

doi = "10.1109/ISDRS.2009.5378321",

language = "English",

isbn = "978-1-4244-6030-4",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

publisher = "IEEE",

address = "United States",

note = "null ; Conference date: 09-12-2009 Through 11-12-2009",

}

Sharbati, S & Fathipour, M 2009, Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 11060188, IEEE, 2009 International Semiconductor Device Research Symposium, College Park, Maryland, United States, 09/12/2009. https://doi.org/10.1109/ISDRS.2009.5378321

Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs. / Sharbati, S.; Fathipour, M.

2009 International Semiconductor Device Research Symposium, ISDRS '09. IEEE, 2009. 11060188.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

AU - Sharbati, S.

AU - Fathipour, M.

PY - 2009

Y1 - 2009

N2 - Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.

AB - Achieving a high breakdown voltage on relatively SOI active layers has been a major concern in the last few years. To address this issue, the reduced surface field (RESURF) principle has been extended to SOI power devices, which are designed to sustain high voltage. In this paper, the effect of vertical scaling on breakdown voltage of Silicon on Insulator Reduce Surface Field Lateral Double-diffused MOSFET (SOI RESURF LDMOSFETs) is investigated. Furthermore, a compact model is presented which is useful for understanding breakdown mechanism at limiting case of ultra-thin-film as well as ultra-thick-film SOI MOSFET's. Two-dimensional simulations verify this model.

U2 - 10.1109/ISDRS.2009.5378321

DO - 10.1109/ISDRS.2009.5378321

M3 - Article in proceedings

SN - 978-1-4244-6030-4

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

PB - IEEE

Y2 - 9 December 2009 through 11 December 2009

ER -

Investigation of vertical scaling on breakdown voltage and presentation of analytical model for electric field distribution in SOI RESURF LDMOSFETs

Abstract

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