Abstract
Voltage overshoot at switch turn-off traditionally limits the DC operating voltage for inverter systems. Mitigation methods include snubber capacitors and intelligent gate control, which add cost and complexity while reducing efficiency. However, the fundamental first step in overshoot reduction is actually minimizing the DC link inductance. The combination of the SBE Power Ring Film Capacitor™ integrated with an optimized bus structure can achieve a DC link inductance below 10nH (approaching 5nH), which is less than typical IGBT halfbridge internal branch values. This enables safely increasing the DC voltage up to 20% as compared to standard configurations, thus improving inverter performance and volume efficiency with existing IGBT's.
| Original language | English |
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| Title of host publication | PCIM Europe Conference Proceedings : International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
| Publication date | 2014 |
| Pages | 501-508 |
| ISBN (Print) | 9783800736034 |
| Publication status | Published - 2014 |