Inelastic background analysis of HAXPES spectra: towards enhanced bulk sensitivity in photoemission

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Abstract

We report on quantitative inelastic background analysis in hard X-ray photoelectron spectroscopy at high excitation energy (12-18 keV) using the Tougaard method implemented with careful optimisation of the inelastic scattering cross section. Such a method enables the determination of the in-depth elemental distribution over depths up to70 nm. We studied three parameters and investigate their influence on the results: the depth of the layer increases the uncertainty, the thickness and composition of the layer has an influence on statistics, and the excitation energy that must be chosen as a trade-off between high probing depth and low photoionization cross section. We show how this promising method can be used to follow diffusion of a 1-ML La layer after annealing a technologically relevant sample.

Original languageEnglish
JournalSurface and Interface Analysis
Volume46
Issue number10-11
Pages (from-to)906-910
Number of pages5
ISSN0142-2421
DOIs
Publication statusPublished - 2014

Keywords

  • HAXPES
  • High-k
  • Inelastic background
  • Metal gate
  • Tougaard method

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