@inproceedings{8658dc21e2264ae1b17ebecdd77a7d4a,
title = "Hot electron generation via internal surface photo-effect in structures with quantum well",
abstract = "It was recently demonstrated in the experiments [1,2] that the internal photoemission efficiency can reach several tens of percents because of {"}coherent{"} or, {"}surface{"} photoemission. In present work we provide theoretical description of this effect assuming the surface photoemissionin the structureconsisting ofthe Schottky-barrier metal-semiconductor interface with the Quantum Well (QW) inside. We take into account the difference of dielectric permittivities for the metal and the semiconductor which strongly affects the photoemission efficiency. We show that QW inside the Schottky-barrier can lead to (a) lowering the threshold energy of the photoemission due to resonance tunneling of electrons through the intermediate quasi-level of energy in QW; (b) the photoemission efficiency can be increased by several orders of magnitude.",
keywords = "Hot electron generation, Metal-semiconductor interface, Photo-effect, Schottky barrier, Water splitting",
author = "Shuklin, {Fedor A.} and Smetanin, {Igor V.} and Protsenko, {Igor E.} and Khurgin, {Jacob B.} and Uskov, {Alexander V.}",
year = "2020",
month = jan,
day = "1",
doi = "10.1117/12.2555760",
language = "English",
series = "Proceedings of SPIE, the International Society for Optical Engineering",
publisher = "SPIE - International Society for Optical Engineering",
editor = "MacDonald, {Kevin F.} and Isabelle Staude and Zayats, {Anatoly V.}",
booktitle = "Metamaterials XII",
address = "United States",
note = "Metamaterials XII 2020 ; Conference date: 06-04-2020 Through 10-04-2020",
}