@inproceedings{84c29bcb281448de8972fd1a325f1985,
title = "Enhancing DC-DC Boost Converter Performance with Vertical GaN Split-RSO-MOSFET",
abstract = "This work focuses to improve the performance of DC-DC converters utilizing a vertical GaN split-gate technology-based resurf stepped oxide MOSFET (Split-RSO-MOSFET). The field-plate (FP) electrode in the Split-RSO-MOSFET helps to reduce the surface electric field and binges in the middle of the drift layer, while being enveloped by a thicker oxide within the trench. The Split-RSO-MOSFET was simulated and analyzed using the TCAD simulator and compared with the conventional Trench-MOSFET and RSO-MOSFET. Compared to the Trench-MOSFET and RSO-MOSFET, the Split-RSO-MOSFET exhibits a significant \textasciitilde{}11-fold decrease in CGD and a \textasciitilde{}42\% reduction in energy loss during conversion, attributed to the inclusion of an inter-dielectric layer and gate insulation from the drain by FP. A Split-RSO-MOSFET, functioning with low energy loss, will consequently result in reduced converter dimensions and enhanced system efficiency.",
author = "Jaiswal, \{Nilesh Kumar\} and Thomas Ebel and Samaneh Sharbati",
note = "Publisher Copyright: {\textcopyright} VDE VERLAG GMBH · Berlin · Offenbach.; 2025 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025 ; Conference date: 06-05-2025 Through 08-05-2025",
year = "2025",
doi = "10.30420/566541213",
language = "English",
series = "PCIM Europe Conference Proceedings",
pages = "1626--1631",
booktitle = "International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2025",
publisher = "VDE-Verlag",
}