Efficiency Comparisons of Two-level and Three-level GaN/SiC based Converters

Mohammad Najjar; Morten Nymand; Alireza Kouchaki

doi:10.1109/ECCE-Asia49820.2021.9479380

Efficiency Comparisons of Two-level and Three-level GaN/SiC based Converters

Mohammad Najjar^*
, Morten Nymand
, Alireza Kouchaki

^*Corresponding author for this work

Danfysik A/S

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The efficiency and power density of power electronics converter can easily be improved through the utilization of wide bandgap (WBG) devices. Meanwhile, by growing the diversity of WBG devices, it becomes challenging to select an optimum topology with proper switching frequency to reach an efficient and compact design. Owing to the superior performance of enhancement mode gallium-nitride (GaN) transistors and Silicon Carbide (SiC) MOSFETs, this paper presents efficiency comparisons for GaN/SiC based two-level and three-level converters. Three widely industrial used voltage source converter (VSC) topologies are chosen in this study (1) two-level half-bridge converter, (2) three-level T-type converter, and (3) three-level active neutral-point-clamped (ANPC) converter. Three cases based on different modulation techniques are considered for the comparisons. To verify the results, a prototype of ANPC is built and measured efficiencies are compared with the calculated results.

Original language	English
Title of host publication	2021 IEEE 12th Energy Conversion Congress and Exposition - Asia (ECCE Asia)
Publisher	IEEE
Publication date	2021
Pages	13-18
Article number	9479380
ISBN (Electronic)	9781728163444
DOIs	https://doi.org/10.1109/ECCE-Asia49820.2021.9479380
Publication status	Published - 2021
Event	12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 - Virtual, Singapore, Singapore Duration: 24. May 2021 → 27. May 2021

Conference

Conference	12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021
Country/Territory	Singapore
City	Virtual, Singapore
Period	24/05/2021 → 27/05/2021

Series	Proceedings of the Energy Conversion Congress and Exposition
ISSN	2150-6078

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

Funding

This work was supported by Advanced Power Electronic Technology and Tools (APETT). Find further information on https://www.apett.et.aau.dk/

Keywords

Analytical calculation
Efficiency
Loss calculation
Multilevel converters
Wide bandgap devices

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Cite this

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title = "Efficiency Comparisons of Two-level and Three-level GaN/SiC based Converters",

abstract = "The efficiency and power density of power electronics converter can easily be improved through the utilization of wide bandgap (WBG) devices. Meanwhile, by growing the diversity of WBG devices, it becomes challenging to select an optimum topology with proper switching frequency to reach an efficient and compact design. Owing to the superior performance of enhancement mode gallium-nitride (GaN) transistors and Silicon Carbide (SiC) MOSFETs, this paper presents efficiency comparisons for GaN/SiC based two-level and three-level converters. Three widely industrial used voltage source converter (VSC) topologies are chosen in this study (1) two-level half-bridge converter, (2) three-level T-type converter, and (3) three-level active neutral-point-clamped (ANPC) converter. Three cases based on different modulation techniques are considered for the comparisons. To verify the results, a prototype of ANPC is built and measured efficiencies are compared with the calculated results.",

keywords = "Analytical calculation, Efficiency, Loss calculation, Multilevel converters, Wide bandgap devices",

author = "Mohammad Najjar and Morten Nymand and Alireza Kouchaki",

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year = "2021",

doi = "10.1109/ECCE-Asia49820.2021.9479380",

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Najjar, M, Nymand, M & Kouchaki, A 2021, Efficiency Comparisons of Two-level and Three-level GaN/SiC based Converters. in 2021 IEEE 12th Energy Conversion Congress and Exposition - Asia (ECCE Asia)., 9479380, IEEE, Proceedings of the Energy Conversion Congress and Exposition, pp. 13-18, 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021, Virtual, Singapore, Singapore, 24/05/2021. https://doi.org/10.1109/ECCE-Asia49820.2021.9479380

Efficiency Comparisons of Two-level and Three-level GaN/SiC based Converters. / Najjar, Mohammad; Nymand, Morten; Kouchaki, Alireza.
2021 IEEE 12th Energy Conversion Congress and Exposition - Asia (ECCE Asia). IEEE, 2021. p. 13-18 9479380 (Proceedings of the Energy Conversion Congress and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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AU - Najjar, Mohammad

AU - Nymand, Morten

AU - Kouchaki, Alireza

PY - 2021

Y1 - 2021

N2 - The efficiency and power density of power electronics converter can easily be improved through the utilization of wide bandgap (WBG) devices. Meanwhile, by growing the diversity of WBG devices, it becomes challenging to select an optimum topology with proper switching frequency to reach an efficient and compact design. Owing to the superior performance of enhancement mode gallium-nitride (GaN) transistors and Silicon Carbide (SiC) MOSFETs, this paper presents efficiency comparisons for GaN/SiC based two-level and three-level converters. Three widely industrial used voltage source converter (VSC) topologies are chosen in this study (1) two-level half-bridge converter, (2) three-level T-type converter, and (3) three-level active neutral-point-clamped (ANPC) converter. Three cases based on different modulation techniques are considered for the comparisons. To verify the results, a prototype of ANPC is built and measured efficiencies are compared with the calculated results.

AB - The efficiency and power density of power electronics converter can easily be improved through the utilization of wide bandgap (WBG) devices. Meanwhile, by growing the diversity of WBG devices, it becomes challenging to select an optimum topology with proper switching frequency to reach an efficient and compact design. Owing to the superior performance of enhancement mode gallium-nitride (GaN) transistors and Silicon Carbide (SiC) MOSFETs, this paper presents efficiency comparisons for GaN/SiC based two-level and three-level converters. Three widely industrial used voltage source converter (VSC) topologies are chosen in this study (1) two-level half-bridge converter, (2) three-level T-type converter, and (3) three-level active neutral-point-clamped (ANPC) converter. Three cases based on different modulation techniques are considered for the comparisons. To verify the results, a prototype of ANPC is built and measured efficiencies are compared with the calculated results.

KW - Analytical calculation

KW - Efficiency

KW - Loss calculation

KW - Multilevel converters

KW - Wide bandgap devices

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M3 - Article in proceedings

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ER -

Efficiency Comparisons of Two-level and Three-level GaN/SiC based Converters

Abstract

Conference

Bibliographical note

Funding

Keywords

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