Abstract
The efficiency and power density of power electronics converter can easily be improved through the utilization of wide bandgap (WBG) devices. Meanwhile, by growing the diversity of WBG devices, it becomes challenging to select an optimum topology with proper switching frequency to reach an efficient and compact design. Owing to the superior performance of enhancement mode gallium-nitride (GaN) transistors and Silicon Carbide (SiC) MOSFETs, this paper presents efficiency comparisons for GaN/SiC based two-level and three-level converters. Three widely industrial used voltage source converter (VSC) topologies are chosen in this study (1) two-level half-bridge converter, (2) three-level T-type converter, and (3) three-level active neutral-point-clamped (ANPC) converter. Three cases based on different modulation techniques are considered for the comparisons. To verify the results, a prototype of ANPC is built and measured efficiencies are compared with the calculated results.
Original language | English |
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Title of host publication | 2021 IEEE 12th Energy Conversion Congress and Exposition - Asia (ECCE Asia) |
Publisher | IEEE |
Publication date | 2021 |
Pages | 13-18 |
Article number | 9479380 |
ISBN (Electronic) | 9781728163444 |
DOIs | |
Publication status | Published - 2021 |
Event | 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 - Virtual, Singapore, Singapore Duration: 24. May 2021 → 27. May 2021 |
Conference
Conference | 12th IEEE Energy Conversion Congress and Exposition - Asia, ECCE Asia 2021 |
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Country/Territory | Singapore |
City | Virtual, Singapore |
Period | 24/05/2021 → 27/05/2021 |
Series | Proceedings of the Energy Conversion Congress and Exposition |
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ISSN | 2150-6078 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
Keywords
- Analytical calculation
- Efficiency
- Loss calculation
- Multilevel converters
- Wide bandgap devices