Effect investigations of double pulse test on the wide bandgap power devices

Jian Zhi Fu*, Giorgo Kapino, Wulf Toke Franke

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This paper addresses the investigations of the probe depending effects on the dynamic characteristics for a commercial SiC MOSFET. A double pulse test with a clamped inductive load has been used for the analysis on the switching behaviors of the devices under test (DUT). Then these switching characteristics are investigated under different voltage and current measurements in order to define a standard measurement guideline for the final test setup. In this paper, a 1,2kV SiC MOSFET is evaluated in terms of turn on and turn off voltage and current measurement.

Original languageEnglish
Title of host publicationPCIM Europe-International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2020
PublisherMesago PCIM GmbH
Publication date2020
Pages1202-1207
ISBN (Print)9783800752454
Publication statusPublished - 2020
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020 - Virtual, Online
Duration: 7. Jul 20208. Jul 2020

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020
CityVirtual, Online
Period07/07/202008/07/2020
SeriesPCIM Europe Conference Proceedings
Volume1

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