Disorder tuned superconductor insulator transition in La 2-x(Sr/Ce) xCuO 4 & NbN superconducting thin films

J. Vanacken*, G. Zhang, T. Wambecq, V. V. Moshchalkov, B. Leridon, K. Jin, B. R. Zhao, B. Y. Zhu, P. Raychaudhuri, S. P. Chockalingam, M. Chand, J. Jesudasan

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

In studying the magneto-resistivity ρ(B) in high pulsed magnetic fields up to 55 T, it is often observed that the ρ(B) curves for different temperatures in the vicinity of the critical temperature cross at the same field value, B = B CP. We show how the crossing field changes as a function of the hole (or electron) doping x in La 2-x(Sr/Ce) xCuO 4. The resistivity ρ and the magnetic field B at different temperatures may be scaled as R/R CP and |B - B CP|/T γ, respectively. This kind of scaling resulted in a conventional critical exponent γ = 1/vz = 1.35 (vz ∼0.74) in our La 2-x(Sr/Ce) xCuO 4 thin films, and a much higher value of γ = 4.35 (vz ∼0.23) in the case of our disordered NbN films.

Original languageEnglish
JournalJournal of Superconductivity and Novel Magnetism
Volume23
Issue number5
Pages (from-to)807-810
Number of pages4
ISSN1557-1939
DOIs
Publication statusPublished - 1. Jul 2010

Fingerprint

insulators
disorders
electrical resistivity
thin films
magnetic fields
critical temperature
exponents
scaling
temperature
curves
electrons

Keywords

  • Crossing point
  • Disorder
  • La - (Sr/Ce) CuO
  • NbN
  • Superconductivity

Cite this

Vanacken, J. ; Zhang, G. ; Wambecq, T. ; Moshchalkov, V. V. ; Leridon, B. ; Jin, K. ; Zhao, B. R. ; Zhu, B. Y. ; Raychaudhuri, P. ; Chockalingam, S. P. ; Chand, M. ; Jesudasan, J. / Disorder tuned superconductor insulator transition in La 2-x(Sr/Ce) xCuO 4 & NbN superconducting thin films. In: Journal of Superconductivity and Novel Magnetism. 2010 ; Vol. 23, No. 5. pp. 807-810.
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title = "Disorder tuned superconductor insulator transition in La 2-x(Sr/Ce) xCuO 4 & NbN superconducting thin films",
abstract = "In studying the magneto-resistivity ρ(B) in high pulsed magnetic fields up to 55 T, it is often observed that the ρ(B) curves for different temperatures in the vicinity of the critical temperature cross at the same field value, B = B CP. We show how the crossing field changes as a function of the hole (or electron) doping x in La 2-x(Sr/Ce) xCuO 4. The resistivity ρ and the magnetic field B at different temperatures may be scaled as R/R CP and |B - B CP|/T γ, respectively. This kind of scaling resulted in a conventional critical exponent γ = 1/vz = 1.35 (vz ∼0.74) in our La 2-x(Sr/Ce) xCuO 4 thin films, and a much higher value of γ = 4.35 (vz ∼0.23) in the case of our disordered NbN films.",
keywords = "Crossing point, Disorder, La - (Sr/Ce) CuO, NbN, Superconductivity",
author = "J. Vanacken and G. Zhang and T. Wambecq and Moshchalkov, {V. V.} and B. Leridon and K. Jin and Zhao, {B. R.} and Zhu, {B. Y.} and P. Raychaudhuri and Chockalingam, {S. P.} and M. Chand and J. Jesudasan",
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Vanacken, J, Zhang, G, Wambecq, T, Moshchalkov, VV, Leridon, B, Jin, K, Zhao, BR, Zhu, BY, Raychaudhuri, P, Chockalingam, SP, Chand, M & Jesudasan, J 2010, 'Disorder tuned superconductor insulator transition in La 2-x(Sr/Ce) xCuO 4 & NbN superconducting thin films', Journal of Superconductivity and Novel Magnetism, vol. 23, no. 5, pp. 807-810. https://doi.org/10.1007/s10948-010-0663-6

Disorder tuned superconductor insulator transition in La 2-x(Sr/Ce) xCuO 4 & NbN superconducting thin films. / Vanacken, J.; Zhang, G.; Wambecq, T.; Moshchalkov, V. V.; Leridon, B.; Jin, K.; Zhao, B. R.; Zhu, B. Y.; Raychaudhuri, P.; Chockalingam, S. P.; Chand, M.; Jesudasan, J.

In: Journal of Superconductivity and Novel Magnetism, Vol. 23, No. 5, 01.07.2010, p. 807-810.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Disorder tuned superconductor insulator transition in La 2-x(Sr/Ce) xCuO 4 & NbN superconducting thin films

AU - Vanacken, J.

AU - Zhang, G.

AU - Wambecq, T.

AU - Moshchalkov, V. V.

AU - Leridon, B.

AU - Jin, K.

AU - Zhao, B. R.

AU - Zhu, B. Y.

AU - Raychaudhuri, P.

AU - Chockalingam, S. P.

AU - Chand, M.

AU - Jesudasan, J.

PY - 2010/7/1

Y1 - 2010/7/1

N2 - In studying the magneto-resistivity ρ(B) in high pulsed magnetic fields up to 55 T, it is often observed that the ρ(B) curves for different temperatures in the vicinity of the critical temperature cross at the same field value, B = B CP. We show how the crossing field changes as a function of the hole (or electron) doping x in La 2-x(Sr/Ce) xCuO 4. The resistivity ρ and the magnetic field B at different temperatures may be scaled as R/R CP and |B - B CP|/T γ, respectively. This kind of scaling resulted in a conventional critical exponent γ = 1/vz = 1.35 (vz ∼0.74) in our La 2-x(Sr/Ce) xCuO 4 thin films, and a much higher value of γ = 4.35 (vz ∼0.23) in the case of our disordered NbN films.

AB - In studying the magneto-resistivity ρ(B) in high pulsed magnetic fields up to 55 T, it is often observed that the ρ(B) curves for different temperatures in the vicinity of the critical temperature cross at the same field value, B = B CP. We show how the crossing field changes as a function of the hole (or electron) doping x in La 2-x(Sr/Ce) xCuO 4. The resistivity ρ and the magnetic field B at different temperatures may be scaled as R/R CP and |B - B CP|/T γ, respectively. This kind of scaling resulted in a conventional critical exponent γ = 1/vz = 1.35 (vz ∼0.74) in our La 2-x(Sr/Ce) xCuO 4 thin films, and a much higher value of γ = 4.35 (vz ∼0.23) in the case of our disordered NbN films.

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KW - Disorder

KW - La - (Sr/Ce) CuO

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U2 - 10.1007/s10948-010-0663-6

DO - 10.1007/s10948-010-0663-6

M3 - Journal article

AN - SCOPUS:77954819069

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JO - Journal of Superconductivity and Novel Magnetism

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SN - 1557-1939

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