Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology

Samaneh Sharbati; Thomas Ebel; Toke Franke

doi:10.1016/j.microrel.2020.113907

Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology

Samaneh Sharbati^*, Thomas Ebel, Toke Franke

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

In this paper, a normally-OFF high voltage GaN HFETs based on the Polarization Super Junction (PSJ) concept has been presented. In this new device, threshold voltage (VTH) can be controlled by adjusting the etching depth of the recessed region without modifying on-resistance (RON) characteristics. The threshold voltage of E-mode device increased to 2 V while the threshold voltage for experimental D-mode structure was about −4 V. The challenge of achieving high breakdown voltage (BV) with minimum on-resistance has been addressed by the lateral scaling of recessed region to achieve an improved figure of merit (FOM). The specific on-resistance of the proposed E-mode PSJ HFET is maintained low while the BV of the device increases from 560 V to 800 V of the D-mode PSJ HFET with the same dimensional parameters.

Original language	English
Article number	113907
Journal	Microelectronics Reliability
Volume	114
Number of pages	4
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2020.113907
Publication status	Published - Nov 2020

Keywords

power electronic
Semiconductor materials
GaN devices
Normally off
Breakdown Voltage
threshold voltage

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10.1016/j.microrel.2020.113907Licence: CC BY

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title = "Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology",

abstract = "In this paper, a normally-OFF high voltage GaN HFETs based on the Polarization Super Junction (PSJ) concept has been presented. In this new device, threshold voltage (VTH) can be controlled by adjusting the etching depth of the recessed region without modifying on-resistance (RON) characteristics. The threshold voltage of E-mode device increased to 2 V while the threshold voltage for experimental D-mode structure was about −4 V. The challenge of achieving high breakdown voltage (BV) with minimum on-resistance has been addressed by the lateral scaling of recessed region to achieve an improved figure of merit (FOM). The specific on-resistance of the proposed E-mode PSJ HFET is maintained low while the BV of the device increases from 560 V to 800 V of the D-mode PSJ HFET with the same dimensional parameters.",

keywords = "power electronic, Semiconductor materials, GaN devices, Normally off, Breakdown Voltage, threshold voltage",

author = "Samaneh Sharbati and Thomas Ebel and Toke Franke",

year = "2020",

month = nov,

doi = "10.1016/j.microrel.2020.113907",

language = "English",

volume = "114",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

}

TY - JOUR

T1 - Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology

AU - Sharbati, Samaneh

AU - Ebel, Thomas

AU - Franke, Toke

PY - 2020/11

Y1 - 2020/11

N2 - In this paper, a normally-OFF high voltage GaN HFETs based on the Polarization Super Junction (PSJ) concept has been presented. In this new device, threshold voltage (VTH) can be controlled by adjusting the etching depth of the recessed region without modifying on-resistance (RON) characteristics. The threshold voltage of E-mode device increased to 2 V while the threshold voltage for experimental D-mode structure was about −4 V. The challenge of achieving high breakdown voltage (BV) with minimum on-resistance has been addressed by the lateral scaling of recessed region to achieve an improved figure of merit (FOM). The specific on-resistance of the proposed E-mode PSJ HFET is maintained low while the BV of the device increases from 560 V to 800 V of the D-mode PSJ HFET with the same dimensional parameters.

AB - In this paper, a normally-OFF high voltage GaN HFETs based on the Polarization Super Junction (PSJ) concept has been presented. In this new device, threshold voltage (VTH) can be controlled by adjusting the etching depth of the recessed region without modifying on-resistance (RON) characteristics. The threshold voltage of E-mode device increased to 2 V while the threshold voltage for experimental D-mode structure was about −4 V. The challenge of achieving high breakdown voltage (BV) with minimum on-resistance has been addressed by the lateral scaling of recessed region to achieve an improved figure of merit (FOM). The specific on-resistance of the proposed E-mode PSJ HFET is maintained low while the BV of the device increases from 560 V to 800 V of the D-mode PSJ HFET with the same dimensional parameters.

KW - power electronic

KW - Semiconductor materials

KW - GaN devices

KW - Normally off

KW - Breakdown Voltage

KW - threshold voltage

U2 - 10.1016/j.microrel.2020.113907

DO - 10.1016/j.microrel.2020.113907

M3 - Journal article

SN - 0026-2714

VL - 114

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 113907

ER -

Design of E-mode GaN HEMTs by the Polarization Super Junction (PSJ) technology

Abstract

Keywords

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