Dead-Time Analysis of a Universal SiC-GaN-Based DC-DC Converter for Plug-In Electric Vehicles

Milad Moradpour*, Alessandro Serpi, Gianluca Gatto

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

A new universal full-directional SiC-GaN-based two-phase DC-DC converter has been recently introduced. It is supposed to replace with DC-DC battery charger and DC-DC traction drive converters in Plug-In Electric Vehicles. The SiC-GaN-based converter is designed to have the advantage of low switching power loss of GaN in hard-switching application and also avoid a high number of paralleled phases for high power multi-phase DC-DC converter applications. Especially in this paper, a dead-time analysis is done for the state-of-the-art high power GaN and SiC components of the proposed converter. To this aim, a new Spice-based simulation method is presented to obtain precise dead-time power loss calculations. Furthermore, the effect of negative OFF gate-source voltage is investigated.

Original languageEnglish
Title of host publicationIECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society : IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society
PublisherIEEE
Publication date26. Dec 2018
Pages1134-1139
ISBN (Electronic)9781509066841
DOIs
Publication statusPublished - 26. Dec 2018
Externally publishedYes
Event44th Annual Conference of the IEEE Industrial Electronics Society - Omni Shoreham Hotel, Washington, United States
Duration: 21. Oct 201823. Oct 2018
http://www.iecon2018.org/

Conference

Conference44th Annual Conference of the IEEE Industrial Electronics Society
LocationOmni Shoreham Hotel
Country/TerritoryUnited States
CityWashington
Period21/10/201823/10/2018
Internet address

Keywords

  • DC-DC Converter
  • Dead-Time
  • Gallium Nitride
  • Plug-In Electric Vehicles
  • Silicon Carbide

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