Current Source Gate Driver for GaN E-HEMT in Hard-Switched High Power Applications

Milad Moradpour*, Toke Franke, Paolo Pirino, Gianluca Gatto

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

There are two types of current source or resonant gate drivers: with zero and with non-zero initial inductor current respectively. The first type is better known in power electronics where the idea is to recover the gate driver power loss. This idea is useful in high frequency low power applications where the gate driver power loss is not negligible. The second type is not very well known in power electronics where it can reduce the switching power loss by driving the device at a higher gate current. The switching power loss is the main source of losses in hard-switched high power applications. Therefore, in this paper a current source gate driver with non-zero initial inductor current is applied for a 650 V 60 A GaN E-HEMT. Then, a power loss comparison is performed with a voltage source gate driver for the same device. The OrCAD PSpice simulation results validate the switching power loss reduction in the case of the current source gate driver.
Original languageEnglish
Title of host publication2020 International Symposium on Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM)
PublisherIEEE
Publication date7. Aug 2020
Pages408-413
ISBN (Electronic)9781728170190
DOIs
Publication statusPublished - 7. Aug 2020
EventInternational Symposium on Power Electronics, Electrical Drives, Automation and Motion - Sorrento, Italy
Duration: 24. Jun 202026. Jun 2020

Conference

ConferenceInternational Symposium on Power Electronics, Electrical Drives, Automation and Motion
Country/TerritoryItaly
CitySorrento
Period24/06/202026/06/2020

Keywords

  • Current Source Gate Driver
  • Gallium Nitride
  • Hard Switching
  • High Power Converters
  • Resonant Gate Driver

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