Comparative investigation of body diode reliability of 1,2-kV SiC power switches for the temperature measurement

Jianzhi Fu, Walid Mansour, Giorgo Kapino, Thomas Ebel, Toke Franke

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

In this paper, the body diode’s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V SD -T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures
Original languageEnglish
Title of host publication2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
PublisherIEEE
Publication date2021
Pages2224-2228
ISBN (Electronic)978-1-7281-8949-9
DOIs
Publication statusPublished - 2021
Event36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021 - Virtual, Online, United States
Duration: 14. Jun 202117. Jun 2021

Conference

Conference36th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2021
Country/TerritoryUnited States
CityVirtual, Online
Period14/06/202117/06/2021
SponsorIEEE Industry Applications Society, IEEE Power Electronics Society, Power Sources Manufacturers Association
SeriesI E E E Applied Power Electronics Conference and Exposition. Conference Proceedings
ISSN1048-2334

Keywords

  • Bipolar degradation
  • Body-diode
  • SiC MOSFET

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