Bus-bar Design for Silicon-Carbide based Medium Voltage Full-bridge Based Converter Topologies

Prashant Surana*, Ramkrishan Maheshwari, Thomas Ebel

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The advancement in SiC technology is helping to achieve high efficiency and high power density in medium voltage high power applications. SiC comes with various challenges due to fast switching transients. Medium voltage converters are used for various applications. Most of the dc-dc isolated high-power converters are based on full-bridge topologies. In these topologies, bus bar design plays a critical role in the performance for the medium voltage devices. Most critical aspect in medium voltage device based converter is isolation requirement between positive and negative dc-link bus bars. This paper deals with bus bar design of medium voltage device based full bridge topology. Effects of non-ideality of bus-bar is analyzed with spice simulations. Various configurations of bus-bar arrangements are discussed and compared using FEM simulations. One suitable configuration is implemented and experimental results are presented.

Original languageEnglish
Title of host publication2023 IEEE Transportation Electrification Conference and Expo, Asia-Pacific (ITEC Asia-Pacific)
Number of pages5
PublisherIEEE
Publication date2023
ISBN (Electronic)9798350314274
DOIs
Publication statusPublished - 2023
Event2023 IEEE Transportation Electrification Conference and Expo, Asia-Pacific, ITEC Asia-Pacific 2023 - Chiang Mai, Thailand
Duration: 28. Nov 20231. Dec 2023

Conference

Conference2023 IEEE Transportation Electrification Conference and Expo, Asia-Pacific, ITEC Asia-Pacific 2023
Country/TerritoryThailand
CityChiang Mai
Period28/11/202301/12/2023

Keywords

  • bus-bar
  • current density
  • FEM
  • full bridge converter
  • inductance
  • SiC

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