Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

L. Jelver; K. W. Jacobsen; O. Hansen; S. Smidstrup; V. Arcisauskaite; A. Blom

doi:10.1109/NMDC50713.2021.9677494

Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

L. Jelver, K. W. Jacobsen, O. Hansen, S. Smidstrup, V. Arcisauskaite, A. Blom

Research output: Chapter in Book/Report/Conference proceeding › Conference abstract in proceedings › Research › peer-review

Abstract

As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2, 3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.

Original language	English
Title of host publication	2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021
Number of pages	1
Publisher	IEEE
Publication date	2021
ISBN (Print)	978-1-6654-4653-2
ISBN (Electronic)	978-1-6654-1892-8
DOIs	https://doi.org/10.1109/NMDC50713.2021.9677494
Publication status	Published - 2021
Event	16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021 - Vancouver, Canada Duration: 12. Dec 2021 → 15. Dec 2021

Conference

Conference	16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021
Country/Territory	Canada
City	Vancouver
Period	12/12/2021 → 15/12/2021
Sponsor	IEEE Nanotechnology Council (NTC)

Documents & Links

10.1109/NMDC50713.2021.9677494

Cite this

@inbook{7befc8613ac342b0abd49326d21c72a1,

title = "Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics",

abstract = "As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2, 3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1. ",

author = "L. Jelver and Jacobsen, {K. W.} and O. Hansen and S. Smidstrup and V. Arcisauskaite and A. Blom",

note = "Funding Information: This work was partly funded by the Innovation Fund Denmark (IFD) under File No. 5189-00082B. We would like to thank Kurt Stokbro and Daniele Stradi for their contributions. Publisher Copyright: {\textcopyright} 2021 IEEE.; 16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021 ; Conference date: 12-12-2021 Through 15-12-2021",

year = "2021",

doi = "10.1109/NMDC50713.2021.9677494",

language = "English",

isbn = "978-1-6654-4653-2",

booktitle = "2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021",

publisher = "IEEE",

address = "United States",

}

Jelver, L, Jacobsen, KW, Hansen, O, Smidstrup, S, Arcisauskaite, V & Blom, A 2021, Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics. in 2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021. IEEE, 16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021, Vancouver, Canada, 12/12/2021. https://doi.org/10.1109/NMDC50713.2021.9677494

TY - ABST

T1 - Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

AU - Jelver, L.

AU - Jacobsen, K. W.

AU - Hansen, O.

AU - Smidstrup, S.

AU - Arcisauskaite, V.

AU - Blom, A.

N1 - Funding Information: This work was partly funded by the Innovation Fund Denmark (IFD) under File No. 5189-00082B. We would like to thank Kurt Stokbro and Daniele Stradi for their contributions. Publisher Copyright: © 2021 IEEE.

PY - 2021

Y1 - 2021

N2 - As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2, 3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.

AB - As new materials and designs are being investigated for the development of next generation semiconductor technology nodes [1], this work focuses on atomically thin two-dimensional (2D) transition metal dichalcogenide (TMD) materials for future transistor designs [2, 3]. In such devices, the metallic phase of TMDs (T') can be used as the source and drain electrodes and the semiconducting phase (H) as the channel, as shown in Figure 1.

U2 - 10.1109/NMDC50713.2021.9677494

DO - 10.1109/NMDC50713.2021.9677494

M3 - Conference abstract in proceedings

AN - SCOPUS:85125301288

SN - 978-1-6654-4653-2

BT - 2021 IEEE 16th Nanotechnology Materials and Devices Conference, NMDC 2021

PB - IEEE

T2 - 16th IEEE Nanotechnology Materials and Devices Conference, NMDC 2021

Y2 - 12 December 2021 through 15 December 2021

ER -

Atomic-scale Modeling of 2D Material Based Contacts and Transistors for Nanoscale Electronics

Abstract

Conference

Documents & Links

Fingerprint

Cite this