Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

O. Renault*, E. Martinez, C. Zborowski, J. Mann, R. Inoue, J. Newman, K. Watanabe

*Corresponding author for this work

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

Original languageEnglish
JournalSurface and Interface Analysis
Volume50
Issue number11
Pages (from-to)1158-1162
ISSN0142-2421
DOIs
Publication statusPublished - Nov 2018
Event17th European Conference on Applications of Surface and Interface Analysis - Montpellier, France
Duration: 24. Sep 201729. Sep 2017

Conference

Conference17th European Conference on Applications of Surface and Interface Analysis
CountryFrance
CityMontpellier
Period24/09/201729/09/2017

Fingerprint

Chemical shift
Light sources
Spectrometers
Multilayers
Photons
X ray photoelectron spectroscopy
Electric potential
chemical equilibrium
high voltages
analyzers
photoelectron spectroscopy
spectrometers
high resolution
photons
x rays
energy

Keywords

  • Buried interface
  • CrKα
  • Hard X-ray
  • HAXPES
  • XPS

Cite this

Renault, O., Martinez, E., Zborowski, C., Mann, J., Inoue, R., Newman, J., & Watanabe, K. (2018). Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source. Surface and Interface Analysis, 50(11), 1158-1162. https://doi.org/10.1002/sia.6451
Renault, O. ; Martinez, E. ; Zborowski, C. ; Mann, J. ; Inoue, R. ; Newman, J. ; Watanabe, K. / Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source. In: Surface and Interface Analysis. 2018 ; Vol. 50, No. 11. pp. 1158-1162.
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abstract = "Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.",
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Renault, O, Martinez, E, Zborowski, C, Mann, J, Inoue, R, Newman, J & Watanabe, K 2018, 'Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source', Surface and Interface Analysis, vol. 50, no. 11, pp. 1158-1162. https://doi.org/10.1002/sia.6451

Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source. / Renault, O.; Martinez, E.; Zborowski, C.; Mann, J.; Inoue, R.; Newman, J.; Watanabe, K.

In: Surface and Interface Analysis, Vol. 50, No. 11, 11.2018, p. 1158-1162.

Research output: Contribution to journalConference articleResearchpeer-review

TY - GEN

T1 - Analysis of buried interfaces in multilayer device structures with hard XPS (HAXPES) using a CrKα source

AU - Renault, O.

AU - Martinez, E.

AU - Zborowski, C.

AU - Mann, J.

AU - Inoue, R.

AU - Newman, J.

AU - Watanabe, K.

PY - 2018/11

Y1 - 2018/11

N2 - Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

AB - Applications of laboratory hard X-ray photoelectron spectroscopy on buried interfaces in devices are presented. We use a novel spectrometer fitted with a monochromated CrKα source (photon energy: 5414.9 eV) and a high-voltage analyzer. Elements buried at depths as deep as 25 nm underneath various overlayers such as Al/Ta and Pt/Ti are detected and quantified from survey spectra, with chemical shifts accessible from high-resolution scans. Different analysis conditions towards optimizing the information depth are presented and discussed.

KW - Buried interface

KW - CrKα

KW - Hard X-ray

KW - HAXPES

KW - XPS

U2 - 10.1002/sia.6451

DO - 10.1002/sia.6451

M3 - Conference article

AN - SCOPUS:85047446835

VL - 50

SP - 1158

EP - 1162

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 11

ER -