AES SPUTTER PROFILES OF ANODIC OXIDE FILMS ON (HG, CD)TE

P. MORGEN*, J. A. SILBERMAN, I. LINDAU, W. E. SPICER, J. A. WILSON

*Corresponding author for this work

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

SPUTTER PROFILING WITH AUGER ELECTRON SPECTROSCOPY HAS BEENUSED TO DETERMINE THE DEPTH PROFILES OF HG, CD, TE, AND O IN ANODIC OXIDES ON (HG,CD)TE IN AN EFFORT TO MONITOR THE COMPOSITION OF THE OXIDES AND THE PROPERTIES OF THE OXIDE-SEMICONDUCTOR INTERFACE. THE MEASUREMENTS ARE STRAIGHTFORWARD, BUT THE ANALYSIS AND EXTRACTION OF ATOMIC CONCENTRATION PROFILES ARE COMPLICATED DUE TO NONSTOICHIOMETRIC EROSION OF THE BASE MATERIAL AND POSSIBLY OF THE OXIDE. CONCLUSIONS FROM THIS AND EARLIER STUDIES ABOUT THE COMPOSITION OF THE SEMICONDUCTOR PAST THE INTERFACE ARE STILL DEPENDENT ON A MORE BASAL UNDERSTANDING OF THE EFFECTS OF LOW ENERGY ION BOMBARDMENT ON (HG, CD)TE.

Original languageEnglish
JournalJournal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films
Volume21
Issue number1
Pages (from-to)161-163
Number of pages3
ISSN1553-1813
Publication statusPublished - 1. Jan 1982
EventPROC OF THE US WORKSHOP ON THE PHYS AND CHEM OF MERCURY CADMIUM TELLURIDE, 1ST - Minneapolis, MN, USA
Duration: 28. Oct 198130. Oct 1981

Conference

ConferencePROC OF THE US WORKSHOP ON THE PHYS AND CHEM OF MERCURY CADMIUM TELLURIDE, 1ST
CityMinneapolis, MN, USA
Period28/10/198130/10/1981

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