Abstract
At high speed operation of SiC MOSFETs, significant gate losses are present with conventional resistive gate driver circuits. Besides, excessive electromagnetic interference may be generated when they are hard-switched and hence dv/dt control is desired in certain applications. A modified resonant gate driver circuit with separate turn-on and turn-off resonant transfer path is proposed in order to have a decoupled passive dv/dt control of a MOSFET for both turn-on and turn-off process. Further it has been demonstrated using the proposed circuit that dv/dt can be effectively adjusted by proper selection of resonant inductance in each path.
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEMA Engineer Infinite Conference, eTechNxT 2018 |
| Editors | Urooj Shabana Urooj, Subrata Mukhopadhyay |
| Number of pages | 5 |
| Publisher | IEEE |
| Publication date | 13. Jun 2018 |
| ISBN (Print) | 978-1-5386-1139-5 |
| ISBN (Electronic) | 978-1-5386-1138-8 |
| DOIs | |
| Publication status | Published - 13. Jun 2018 |
| Externally published | Yes |
| Event | 2018 IEEMA Engineer Infinite Conference, eTechNxT 2018 - New Delhi, India Duration: 13. Mar 2018 → 14. Mar 2018 |
Conference
| Conference | 2018 IEEMA Engineer Infinite Conference, eTechNxT 2018 |
|---|---|
| Country/Territory | India |
| City | New Delhi |
| Period | 13/03/2018 → 14/03/2018 |
Keywords
- dv/dt
- EMI
- Gallium Nitride (GaN)
- high frequency
- metal-oxide semiconductor field effect transistor (MOSFET)
- resonant gate driver
- Silicon Carbide (SiC)