A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure

Ali A. Orouji, Samaneh Sharbati, Morteza Fathipour

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


In this paper, we have proposed a novel Silicon-On-Insulator (SOI) power MOSFETstructure .This structure is a combination of two sub structures: a buried oxide step(BOS) and a buried oxide double step (BODS) that named asymmetrical buried oxidedouble step (ABODS). Using two-dimensional simulation, we have investigated theimprovement in device performance focusing on the breakdown voltage. The ABODSstructure exhibits a high breakdown voltage respected to other SOI structures at a muchhigher impurity concentration that can causes lower on-resistance (RON).
Original languageEnglish
Title of host publicationProceedings of the 6th ICEENG Conference, 27-29 May, 2008
Number of pages7
Publication date2008
Article numberEE092
Publication statusPublished - 2008
Externally publishedYes
Event6th International Conference on Electrical Engineering - Military Technical College Kobry El-Kobbah, Cairo, Egypt
Duration: 27. May 200829. May 2008


Conference6th International Conference on Electrical Engineering
LocationMilitary Technical College Kobry El-Kobbah
SeriesInternational Conference on Electrical Engineering


  • Silicon-on-insulator (SOI)
  • Power MOSFET
  • Breakdown Voltage
  • Buried Oxide Double Step Structure


Dive into the research topics of 'A novel thin-film power MOSFET with an asymmetrical buried oxide double step structure'. Together they form a unique fingerprint.

Cite this