A GaN-Based Battery Energy Storage System for Residential Application

Milad Moradpour*, Pooya Ghani, Gianluca Gatto

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The main subject of this paper is the application of the Gallium Nitride (GaN) technology in the battery energy storage system (BESS). Due to voltage/current limitation of the GaN device, a GaN-based BESS is proposed for residential application. The proposed BESS includes a bidirectional half-bridge dc-dc converter and a full-bridge single-phase grid-connected inverter. To reach a power rating of 15 kW, two paralleled GaN devices are considered in the inverter. The power stage design and the controller design of the proposed BESS are studied. Moreover, the GaN device power loss analysis is performed using OrCAD Spice compared to a state-of-the-art silicon carbide (SiC) device. Finally, the performance of the controller is discussed using MATLAB Simulink.

Original languageEnglish
Title of host publication2019 International Conference on Clean Electrical Power (ICCEP)
PublisherIEEE
Publication dateJul 2019
Pages427-432
ISBN (Electronic)9781728113562
DOIs
Publication statusPublished - Jul 2019
Externally publishedYes
Event2019 International Conference on Clean Electrical Power (ICCEP) - Otranto, Italy
Duration: 2. Jul 20194. Jul 2019

Conference

Conference2019 International Conference on Clean Electrical Power (ICCEP)
Country/TerritoryItaly
CityOtranto
Period02/07/201904/07/2019

Keywords

  • Battery Energy Storage System
  • Bidirectional DC-DC Converter
  • Device Paralleling
  • Gallium Nitride
  • Grid-Connected Inverter

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