A 98.8% efficient bidirectional full-bridge isolated dc-dc GaN converter

Rakesh Ramachandran; Morten Nymand

doi:10.1109/APEC.2016.7467934

A 98.8% efficient bidirectional full-bridge isolated dc-dc GaN converter

Rakesh Ramachandran, Morten Nymand

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The paper presents the design and development of an ultra-high efficiency bidirectional isolated full bridge dc-dc converter using Gallium Nitride (GaN) devices. To achieve ultrahigh efficiency, GaN devices, synchronous rectification and high efficiency magnetics are used. The proposed bidirectional converter allows a power flow in both directions using the same power components; this increases power density and reduce the cost. The performance of a 1.7 kW bidirectional converter is experimentally validated in both forward direction (buck mode) and backward direction (boost mode). The converter operates at a switching frequency of 50 kHz with a voltage of 130V at one side and 52V at the other side of the converter. The fast switching speed of the GaN devices are utilized to achieve extremely high conversion efficiency thus reducing the total volume of the converter. The high power GaN converter has attained an extremely high efficiency of 98.8% in both the directions. This paper demonstrates the highest achievable conversion efficiency with the present technology.

Original language	English
Title of host publication	Proceedings of the 2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
Publisher	IEEE Press
Publication date	10. May 2016
Pages	609-614
Article number	7467934
ISBN (Print)	978-1-4673-8393-6
ISBN (Electronic)	978-1-4673-9550-2, 978-1-4673-8394-3
DOIs	https://doi.org/10.1109/APEC.2016.7467934
Publication status	Published - 10. May 2016
Event	31st Annual IEEE Applied Power Electronics Conference and Exposition: , APEC 2016 - Long Beach, United States Duration: 20. Mar 2016 → 24. Mar 2016

Conference

Conference	31st Annual IEEE Applied Power Electronics Conference and Exposition
Country/Territory	United States
City	Long Beach
Period	20/03/2016 → 24/03/2016
Sponsor	IEEE Industry Applications Society, IEEE Power Electronics Society, Power Sources Manufacturers Association (PSMA)

Keywords

Gallium Nitride
high efficiency
isolated dc-dc converter
magnetics
measurement
synchronous rectification
wide band gap devices

Documents & Links

10.1109/APEC.2016.7467934

Cite this

@inproceedings{ff42f079a14048e0899178d33edb1a8b,

title = "A 98.8% efficient bidirectional full-bridge isolated dc-dc GaN converter",

abstract = "The paper presents the design and development of an ultra-high efficiency bidirectional isolated full bridge dc-dc converter using Gallium Nitride (GaN) devices. To achieve ultrahigh efficiency, GaN devices, synchronous rectification and high efficiency magnetics are used. The proposed bidirectional converter allows a power flow in both directions using the same power components; this increases power density and reduce the cost. The performance of a 1.7 kW bidirectional converter is experimentally validated in both forward direction (buck mode) and backward direction (boost mode). The converter operates at a switching frequency of 50 kHz with a voltage of 130V at one side and 52V at the other side of the converter. The fast switching speed of the GaN devices are utilized to achieve extremely high conversion efficiency thus reducing the total volume of the converter. The high power GaN converter has attained an extremely high efficiency of 98.8% in both the directions. This paper demonstrates the highest achievable conversion efficiency with the present technology.",

keywords = "Gallium Nitride, high efficiency, isolated dc-dc converter, magnetics, measurement, synchronous rectification, wide band gap devices",

author = "Rakesh Ramachandran and Morten Nymand",

year = "2016",

month = may,

day = "10",

doi = "10.1109/APEC.2016.7467934",

language = "English",

isbn = "978-1-4673-8393-6",

pages = "609--614",

booktitle = "Proceedings of the 2016 IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

note = "31st Annual IEEE Applied Power Electronics Conference and Exposition : , APEC 2016, APEC ; Conference date: 20-03-2016 Through 24-03-2016",

}

Ramachandran, R & Nymand, M 2016, A 98.8% efficient bidirectional full-bridge isolated dc-dc GaN converter. in Proceedings of the 2016 IEEE Applied Power Electronics Conference and Exposition (APEC)., 7467934, IEEE Press, pp. 609-614, 31st Annual IEEE Applied Power Electronics Conference and Exposition, Long Beach, United States, 20/03/2016. https://doi.org/10.1109/APEC.2016.7467934

TY - GEN

T1 - A 98.8% efficient bidirectional full-bridge isolated dc-dc GaN converter

AU - Ramachandran, Rakesh

AU - Nymand, Morten

PY - 2016/5/10

Y1 - 2016/5/10

N2 - The paper presents the design and development of an ultra-high efficiency bidirectional isolated full bridge dc-dc converter using Gallium Nitride (GaN) devices. To achieve ultrahigh efficiency, GaN devices, synchronous rectification and high efficiency magnetics are used. The proposed bidirectional converter allows a power flow in both directions using the same power components; this increases power density and reduce the cost. The performance of a 1.7 kW bidirectional converter is experimentally validated in both forward direction (buck mode) and backward direction (boost mode). The converter operates at a switching frequency of 50 kHz with a voltage of 130V at one side and 52V at the other side of the converter. The fast switching speed of the GaN devices are utilized to achieve extremely high conversion efficiency thus reducing the total volume of the converter. The high power GaN converter has attained an extremely high efficiency of 98.8% in both the directions. This paper demonstrates the highest achievable conversion efficiency with the present technology.

AB - The paper presents the design and development of an ultra-high efficiency bidirectional isolated full bridge dc-dc converter using Gallium Nitride (GaN) devices. To achieve ultrahigh efficiency, GaN devices, synchronous rectification and high efficiency magnetics are used. The proposed bidirectional converter allows a power flow in both directions using the same power components; this increases power density and reduce the cost. The performance of a 1.7 kW bidirectional converter is experimentally validated in both forward direction (buck mode) and backward direction (boost mode). The converter operates at a switching frequency of 50 kHz with a voltage of 130V at one side and 52V at the other side of the converter. The fast switching speed of the GaN devices are utilized to achieve extremely high conversion efficiency thus reducing the total volume of the converter. The high power GaN converter has attained an extremely high efficiency of 98.8% in both the directions. This paper demonstrates the highest achievable conversion efficiency with the present technology.

KW - Gallium Nitride

KW - high efficiency

KW - isolated dc-dc converter

KW - magnetics

KW - measurement

KW - synchronous rectification

KW - wide band gap devices

U2 - 10.1109/APEC.2016.7467934

DO - 10.1109/APEC.2016.7467934

M3 - Article in proceedings

SN - 978-1-4673-8393-6

SP - 609

EP - 614

BT - Proceedings of the 2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

T2 - 31st Annual IEEE Applied Power Electronics Conference and Exposition

Y2 - 20 March 2016 through 24 March 2016

ER -

A 98.8% efficient bidirectional full-bridge isolated dc-dc GaN converter

Abstract

Conference

Keywords

Documents & Links

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Cite this