6H-SiC lateral power MOSFETs with an asymmetrical buried oxide double step structure

S. Sharbati, A.A. Orouji, M. Fathipour

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

A novel 6H-SiC lateral power MOSFET structure has been proposed with asymmetrical buried oxide double step which improves breakdown voltage. Extra step introduced in the buried oxide enhances peak electric Held and is positioned in the middle of the drift region to maximum breakdown voltage. Using thin-film layer on top of the buried oxide, facilitates employment of high impurity concentration and results in reduction of on- resistance. The doping concentration of drift region , height of step in buried oxide and difference in the thicknesses of buried oxides have been optimized by using device simulation ,to reduce the surface electric field crowding. While lateral power MOSFETs with asymmetrical buried oxide double step structure fabricated on SOI substrate exhibit a maximum breakdown voltage of 245 V with doping concentration of 3.5 times 10 16 cm -3 in drift region , a 6H-SiC lateral MOSFETs show a characteristic breakdown voltage of 2015 V with doping concentration 1.2 times 10 17 c -3 in the drift region.
Original languageEnglish
Title of host publication2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Volume3
PublisherIEEE
Publication date2008
Article number10022712
ISBN (Print)978-1-4244-1879-4
ISBN (Electronic)978-1-4244-1880-0
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 International Conference on Microwave and Millimeter Wave Technology - Nanjing, China
Duration: 21. Apr 200824. Apr 2008

Conference

Conference2008 International Conference on Microwave and Millimeter Wave Technology
Country/TerritoryChina
CityNanjing
Period21/04/200824/04/2008

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