Ultraviolet Interband Plasmonics with Si Nanostructures

Zhaogang Dong*, Tao Wang, Xiao Chi, Jinfa Ho, Christos Tserkezis, Sherry Lee Koon Yap, Andrivo Rusydi, Febiana Tjiptoharsono, Dickson Thian, N. Asger Mortensen, Joel K.W. Yang

*Kontaktforfatter for dette arbejde

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

Resumé

Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (∼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ∼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.

OriginalsprogEngelsk
TidsskriftNano Letters
Vol/bind19
Udgave nummer11
Sider (fra-til)8040-8048
ISSN1530-6984
DOI
StatusUdgivet - 13. nov. 2019

Fingeraftryk

Nanostructures
interrogation
photolithography
chirality
catalysis
photometers
Chirality
Photolithography
Photodetectors
dimers
Dimers
permittivity
Catalysis
Permittivity
augmentation
Metals
Semiconductor materials
wavelengths
Wavelength
metals

Citer dette

Dong, Z., Wang, T., Chi, X., Ho, J., Tserkezis, C., Yap, S. L. K., ... Yang, J. K. W. (2019). Ultraviolet Interband Plasmonics with Si Nanostructures. Nano Letters, 19(11), 8040-8048. https://doi.org/10.1021/acs.nanolett.9b03243
Dong, Zhaogang ; Wang, Tao ; Chi, Xiao ; Ho, Jinfa ; Tserkezis, Christos ; Yap, Sherry Lee Koon ; Rusydi, Andrivo ; Tjiptoharsono, Febiana ; Thian, Dickson ; Mortensen, N. Asger ; Yang, Joel K.W. / Ultraviolet Interband Plasmonics with Si Nanostructures. I: Nano Letters. 2019 ; Bind 19, Nr. 11. s. 8040-8048.
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title = "Ultraviolet Interband Plasmonics with Si Nanostructures",
abstract = "Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (∼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ∼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.",
keywords = "field enhancement, interband plasmonics, localized plasmon resonance, Si nanostructures, Sub-10 nm, UV plasmonics",
author = "Zhaogang Dong and Tao Wang and Xiao Chi and Jinfa Ho and Christos Tserkezis and Yap, {Sherry Lee Koon} and Andrivo Rusydi and Febiana Tjiptoharsono and Dickson Thian and Mortensen, {N. Asger} and Yang, {Joel K.W.}",
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Dong, Z, Wang, T, Chi, X, Ho, J, Tserkezis, C, Yap, SLK, Rusydi, A, Tjiptoharsono, F, Thian, D, Mortensen, NA & Yang, JKW 2019, 'Ultraviolet Interband Plasmonics with Si Nanostructures', Nano Letters, bind 19, nr. 11, s. 8040-8048. https://doi.org/10.1021/acs.nanolett.9b03243

Ultraviolet Interband Plasmonics with Si Nanostructures. / Dong, Zhaogang; Wang, Tao; Chi, Xiao; Ho, Jinfa; Tserkezis, Christos; Yap, Sherry Lee Koon; Rusydi, Andrivo; Tjiptoharsono, Febiana; Thian, Dickson; Mortensen, N. Asger; Yang, Joel K.W.

I: Nano Letters, Bind 19, Nr. 11, 13.11.2019, s. 8040-8048.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Ultraviolet Interband Plasmonics with Si Nanostructures

AU - Dong, Zhaogang

AU - Wang, Tao

AU - Chi, Xiao

AU - Ho, Jinfa

AU - Tserkezis, Christos

AU - Yap, Sherry Lee Koon

AU - Rusydi, Andrivo

AU - Tjiptoharsono, Febiana

AU - Thian, Dickson

AU - Mortensen, N. Asger

AU - Yang, Joel K.W.

PY - 2019/11/13

Y1 - 2019/11/13

N2 - Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (∼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ∼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.

AB - Although Si acts as an electrical semiconductor, it has properties of an optical dielectric. Here, we revisit the behavior of Si as a plasmonic metal. This behavior was previously shown to arise from strong interband transitions that lead to negative permittivity of Si across the ultraviolet spectral range. However, few have studied the plasmonic characteristics of Si, particularly in its nanostructures. In this paper, we report localized plasmon resonances of Si nanostructures and the observation of plasmon hybridization in the UV (∼250 nm wavelength). In addition, simulation results show that Si nanodisk dimers can achieve a local intensity enhancement greater than ∼500-fold in a 1 nm gap. Lastly, we investigate hybrid Si-Al nanostructures to achieve sharp resonances in the UV, due to the coupling between plasmon resonances supported by Si and Al nanostructures. These results will have potential applications in the UV range, such as nanostructured devices for spectral filtering, plasmon-enhanced Si photodetectors, interrogation of molecular chirality, and catalysis. It could have significant impact on UV photolithography on patterned Si structures.

KW - field enhancement

KW - interband plasmonics

KW - localized plasmon resonance

KW - Si nanostructures

KW - Sub-10 nm

KW - UV plasmonics

U2 - 10.1021/acs.nanolett.9b03243

DO - 10.1021/acs.nanolett.9b03243

M3 - Journal article

VL - 19

SP - 8040

EP - 8048

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 11

ER -