Ultra-high Efficiency DC-DC Converter using GaN Devices

Publikation: Bog/antologi/afhandling/rapportPh.d.-afhandlingForskning

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Resumé

The demands for high efficiency dc-dc power converters are increasing day by day in various
applications such as telecommunication, data-centers, electric vehicles and various renewable
energy systems. Silicon (Si) has been used as the semiconductor material in majority of the
power devices for many decades. However, the rate of improvement slowed as the silicon power
materials asymptotically approached its theoretical bounds. Compared to Si, wideband gap
materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are promising
semiconductors for power devices due to their superior material properties such as high
temperature operation, high breakdown voltage and high frequency operation. Among wide
band-gap devices, GaN has an enhanced mobility of electrons, compared to SiC, which helps
in achieving smaller size for a given on-resistance and breakdown voltage. These superior
properties of GaN devices can be utilized in power converters to make them more compact and
highly efficient.
This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses on
achieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimal
utilization of GaN devices. Simple replacement of Si or SiC devices with GaN devices in the
converter will not give an expected increase in efficiency or any improvement in the
performance of the converter. The use of GaN devices has defined another dimension in the
design of power converters, which mainly deals with the PCB layout and the magnetics.
This thesis mainly covers the design and implementation of various high efficiency isolated dcdc
converters in the range of 1 to 2.5 kW of output power. Both hard-switched and soft-switched
topologies in isolated dc-dc converters has been studied and realized in this thesis. Efficiency
measurements from the hardware prototype of both the topologies are also presented in this
thesis. Finally, the bidirectional operation of an optimized isolated dc-dc converter is presented.
The optimized converter has achieved an ultra-high efficiency of 98.8% in both directions of
power flow.
OriginalsprogEngelsk
Antal sider152
StatusUdgivet - 2016

Fingeraftryk

Gallium nitride
DC-DC converters
Power converters
Silicon carbide
Silicon
Electric breakdown
Electric vehicles
Polychlorinated biphenyls
Conversion efficiency
Telecommunication
Materials properties
Topology
Semiconductor materials
Hardware
Electrons

Citer dette

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title = "Ultra-high Efficiency DC-DC Converter using GaN Devices",
abstract = "The demands for high efficiency dc-dc power converters are increasing day by day in variousapplications such as telecommunication, data-centers, electric vehicles and various renewableenergy systems. Silicon (Si) has been used as the semiconductor material in majority of thepower devices for many decades. However, the rate of improvement slowed as the silicon powermaterials asymptotically approached its theoretical bounds. Compared to Si, wideband gapmaterials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are promisingsemiconductors for power devices due to their superior material properties such as hightemperature operation, high breakdown voltage and high frequency operation. Among wideband-gap devices, GaN has an enhanced mobility of electrons, compared to SiC, which helpsin achieving smaller size for a given on-resistance and breakdown voltage. These superiorproperties of GaN devices can be utilized in power converters to make them more compact andhighly efficient.This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses onachieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimalutilization of GaN devices. Simple replacement of Si or SiC devices with GaN devices in theconverter will not give an expected increase in efficiency or any improvement in theperformance of the converter. The use of GaN devices has defined another dimension in thedesign of power converters, which mainly deals with the PCB layout and the magnetics.This thesis mainly covers the design and implementation of various high efficiency isolated dcdcconverters in the range of 1 to 2.5 kW of output power. Both hard-switched and soft-switchedtopologies in isolated dc-dc converters has been studied and realized in this thesis. Efficiencymeasurements from the hardware prototype of both the topologies are also presented in thisthesis. Finally, the bidirectional operation of an optimized isolated dc-dc converter is presented.The optimized converter has achieved an ultra-high efficiency of 98.8{\%} in both directions ofpower flow.",
keywords = "DC-DC power converters,, Conversion efficiency, Power transformers, Wide band gap semiconductors, Gallium Nitride (GaN), Bidirectional power flow",
author = "Rakesh Ramachandran",
year = "2016",
language = "English",

}

Ultra-high Efficiency DC-DC Converter using GaN Devices. / Ramachandran, Rakesh.

2016. 152 s.

Publikation: Bog/antologi/afhandling/rapportPh.d.-afhandlingForskning

TY - BOOK

T1 - Ultra-high Efficiency DC-DC Converter using GaN Devices

AU - Ramachandran, Rakesh

PY - 2016

Y1 - 2016

N2 - The demands for high efficiency dc-dc power converters are increasing day by day in variousapplications such as telecommunication, data-centers, electric vehicles and various renewableenergy systems. Silicon (Si) has been used as the semiconductor material in majority of thepower devices for many decades. However, the rate of improvement slowed as the silicon powermaterials asymptotically approached its theoretical bounds. Compared to Si, wideband gapmaterials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are promisingsemiconductors for power devices due to their superior material properties such as hightemperature operation, high breakdown voltage and high frequency operation. Among wideband-gap devices, GaN has an enhanced mobility of electrons, compared to SiC, which helpsin achieving smaller size for a given on-resistance and breakdown voltage. These superiorproperties of GaN devices can be utilized in power converters to make them more compact andhighly efficient.This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses onachieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimalutilization of GaN devices. Simple replacement of Si or SiC devices with GaN devices in theconverter will not give an expected increase in efficiency or any improvement in theperformance of the converter. The use of GaN devices has defined another dimension in thedesign of power converters, which mainly deals with the PCB layout and the magnetics.This thesis mainly covers the design and implementation of various high efficiency isolated dcdcconverters in the range of 1 to 2.5 kW of output power. Both hard-switched and soft-switchedtopologies in isolated dc-dc converters has been studied and realized in this thesis. Efficiencymeasurements from the hardware prototype of both the topologies are also presented in thisthesis. Finally, the bidirectional operation of an optimized isolated dc-dc converter is presented.The optimized converter has achieved an ultra-high efficiency of 98.8% in both directions ofpower flow.

AB - The demands for high efficiency dc-dc power converters are increasing day by day in variousapplications such as telecommunication, data-centers, electric vehicles and various renewableenergy systems. Silicon (Si) has been used as the semiconductor material in majority of thepower devices for many decades. However, the rate of improvement slowed as the silicon powermaterials asymptotically approached its theoretical bounds. Compared to Si, wideband gapmaterials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are promisingsemiconductors for power devices due to their superior material properties such as hightemperature operation, high breakdown voltage and high frequency operation. Among wideband-gap devices, GaN has an enhanced mobility of electrons, compared to SiC, which helpsin achieving smaller size for a given on-resistance and breakdown voltage. These superiorproperties of GaN devices can be utilized in power converters to make them more compact andhighly efficient.This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses onachieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimalutilization of GaN devices. Simple replacement of Si or SiC devices with GaN devices in theconverter will not give an expected increase in efficiency or any improvement in theperformance of the converter. The use of GaN devices has defined another dimension in thedesign of power converters, which mainly deals with the PCB layout and the magnetics.This thesis mainly covers the design and implementation of various high efficiency isolated dcdcconverters in the range of 1 to 2.5 kW of output power. Both hard-switched and soft-switchedtopologies in isolated dc-dc converters has been studied and realized in this thesis. Efficiencymeasurements from the hardware prototype of both the topologies are also presented in thisthesis. Finally, the bidirectional operation of an optimized isolated dc-dc converter is presented.The optimized converter has achieved an ultra-high efficiency of 98.8% in both directions ofpower flow.

KW - DC-DC power converters,

KW - Conversion efficiency

KW - Power transformers

KW - Wide band gap semiconductors

KW - Gallium Nitride (GaN)

KW - Bidirectional power flow

M3 - Ph.D. thesis

BT - Ultra-high Efficiency DC-DC Converter using GaN Devices

ER -