TY - JOUR
T1 - Tuning surface defect states in sputtered titanium oxide electron transport layers for enhanced stability of organic photovoltaics
AU - Ahmadpour, Mehrad
AU - Ahmad, Mariam
AU - Prete, Michela
AU - Hansen, John Lundsgaard
AU - Miakota, Denys I.
AU - Greenbank, William
AU - Zheng, Yunlin Jacques
AU - Top, Michiel
AU - Ebel, Thomas
AU - Rubahn, Horst Günter
AU - Turkovic, Vida
AU - Canulescu, Stela
AU - Witkowski, Nadine
AU - Madsen, Morten
N1 - Publisher Copyright:
© 2024 American Chemical Society.
PY - 2024/4/3
Y1 - 2024/4/3
N2 - Nonfullerene acceptors (NFAs) have dramatically improved the power conversion efficiency (PCE) of organic photovoltaics (OPV) in recent years; however, their device stability currently remains a bottleneck for further technological progress. Photocatalytic decomposition of nonfullerene acceptor molecules at metal oxide electron transport layer (ETL) interfaces has in several recent reports been demonstrated as one of the main degradation mechanisms for these high-performing OPV devices. While some routes for mitigating such degradation effects have been proposed, e.g., through a second layer integrated on the ETL surface, no clear strategy that complies with device scale-up and application requirements has been presented to date. In this work, it is demonstrated that the development of sputtered titanium oxide layers as ETLs in nonfullerene acceptor based OPV can lead to significantly enhanced device lifetimes. This is achieved by tuning the concentration of defect states at the oxide surface, via the reactive sputtering process, to mitigate the photocatalytic decomposition of NFA molecules at the metal oxide interlayers. Reduced defect state formation at the oxide surface is confirmed through X-ray photoelectron spectroscopy (XPS) studies, while the reduced photocatalytic decomposition of nonfullerene acceptor molecules is confirmed via optical spectroscopy investigations. The PBDB-T:ITIC organic solar cells show power conversion efficiencies of around 10% and significantly enhanced photostability. This is achieved through a reactive sputtering process that is fully scalable and industry compatible.
AB - Nonfullerene acceptors (NFAs) have dramatically improved the power conversion efficiency (PCE) of organic photovoltaics (OPV) in recent years; however, their device stability currently remains a bottleneck for further technological progress. Photocatalytic decomposition of nonfullerene acceptor molecules at metal oxide electron transport layer (ETL) interfaces has in several recent reports been demonstrated as one of the main degradation mechanisms for these high-performing OPV devices. While some routes for mitigating such degradation effects have been proposed, e.g., through a second layer integrated on the ETL surface, no clear strategy that complies with device scale-up and application requirements has been presented to date. In this work, it is demonstrated that the development of sputtered titanium oxide layers as ETLs in nonfullerene acceptor based OPV can lead to significantly enhanced device lifetimes. This is achieved by tuning the concentration of defect states at the oxide surface, via the reactive sputtering process, to mitigate the photocatalytic decomposition of NFA molecules at the metal oxide interlayers. Reduced defect state formation at the oxide surface is confirmed through X-ray photoelectron spectroscopy (XPS) studies, while the reduced photocatalytic decomposition of nonfullerene acceptor molecules is confirmed via optical spectroscopy investigations. The PBDB-T:ITIC organic solar cells show power conversion efficiencies of around 10% and significantly enhanced photostability. This is achieved through a reactive sputtering process that is fully scalable and industry compatible.
KW - electron transport layers
KW - nonfullerene acceptors
KW - organic photovoltaics
KW - oxide defect states
KW - Reactive sputtering
KW - titanium oxide
UR - http://www.scopus.com/inward/record.url?scp=85188988790&partnerID=8YFLogxK
U2 - 10.1021/acsami.4c00056
DO - 10.1021/acsami.4c00056
M3 - Journal article
C2 - 38529895
AN - SCOPUS:85188988790
SN - 1944-8244
VL - 16
SP - 16580
EP - 16588
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 13
ER -