Surface morphology of SiO2 on a Si(111) 7×7 surface formed after alternating exposure to caesium and oxygen and subsequent annealing

B. S. Semak*, T. Jensen, L. B. Takker, P. Morgen, S. Tougaard

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Resumé

The features of Cs enhanced oxidation of silicon is studied with the quases-Tougaard method. It is found that Cs oxide forms islands on the Si(111) 7×7 surface for exposure up to eight cycles (1 cycle=1 ML Cs+100 L O2). These islands in turn form islands of SiO2 on the surface after annealing. The surface coverage of Cs-oxide islands and silicon-oxide islands is found to be the same. At higher (≥10 cycles) exposures, the Cs oxide as well as the SiO22 layer covers the surface completely. It is also shown, that the catalytic effect of Cs is local and that the amount of produced SiO22 is directly proportional to the amount of Cs.

OriginalsprogEngelsk
TidsskriftSurface Science
Vol/bind498
Udgave nummer1-2
Sider (fra-til)11-20
Antal sider10
ISSN0039-6028
DOI
StatusUdgivet - 1. feb. 2002

Fingeraftryk

Cesium
cesium
Surface morphology
Annealing
Oxides
Oxygen
annealing
oxygen
cycles
oxides
Silicon oxides
Silicon
silicon oxides
Oxidation
oxidation
silicon

Citer dette

@article{4cfc722ac0ce46cb8cff728b4358b977,
title = "Surface morphology of SiO2 on a Si(111) 7×7 surface formed after alternating exposure to caesium and oxygen and subsequent annealing",
abstract = "The features of Cs enhanced oxidation of silicon is studied with the quases-Tougaard method. It is found that Cs oxide forms islands on the Si(111) 7×7 surface for exposure up to eight cycles (1 cycle=1 ML Cs+100 L O2). These islands in turn form islands of SiO2 on the surface after annealing. The surface coverage of Cs-oxide islands and silicon-oxide islands is found to be the same. At higher (≥10 cycles) exposures, the Cs oxide as well as the SiO22 layer covers the surface completely. It is also shown, that the catalytic effect of Cs is local and that the amount of produced SiO22 is directly proportional to the amount of Cs.",
keywords = "Oxidation, Silicon oxides, Surface structure, morphology, roughness, and topography, X-ray photoelectron spectroscopy",
author = "Semak, {B. S.} and T. Jensen and Takker, {L. B.} and P. Morgen and S. Tougaard",
year = "2002",
month = "2",
day = "1",
doi = "10.1016/S0039-6028(01)01728-9",
language = "English",
volume = "498",
pages = "11--20",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-2",

}

Surface morphology of SiO2 on a Si(111) 7×7 surface formed after alternating exposure to caesium and oxygen and subsequent annealing. / Semak, B. S.; Jensen, T.; Takker, L. B.; Morgen, P.; Tougaard, S.

I: Surface Science, Bind 498, Nr. 1-2, 01.02.2002, s. 11-20.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

T1 - Surface morphology of SiO2 on a Si(111) 7×7 surface formed after alternating exposure to caesium and oxygen and subsequent annealing

AU - Semak, B. S.

AU - Jensen, T.

AU - Takker, L. B.

AU - Morgen, P.

AU - Tougaard, S.

PY - 2002/2/1

Y1 - 2002/2/1

N2 - The features of Cs enhanced oxidation of silicon is studied with the quases-Tougaard method. It is found that Cs oxide forms islands on the Si(111) 7×7 surface for exposure up to eight cycles (1 cycle=1 ML Cs+100 L O2). These islands in turn form islands of SiO2 on the surface after annealing. The surface coverage of Cs-oxide islands and silicon-oxide islands is found to be the same. At higher (≥10 cycles) exposures, the Cs oxide as well as the SiO22 layer covers the surface completely. It is also shown, that the catalytic effect of Cs is local and that the amount of produced SiO22 is directly proportional to the amount of Cs.

AB - The features of Cs enhanced oxidation of silicon is studied with the quases-Tougaard method. It is found that Cs oxide forms islands on the Si(111) 7×7 surface for exposure up to eight cycles (1 cycle=1 ML Cs+100 L O2). These islands in turn form islands of SiO2 on the surface after annealing. The surface coverage of Cs-oxide islands and silicon-oxide islands is found to be the same. At higher (≥10 cycles) exposures, the Cs oxide as well as the SiO22 layer covers the surface completely. It is also shown, that the catalytic effect of Cs is local and that the amount of produced SiO22 is directly proportional to the amount of Cs.

KW - Oxidation

KW - Silicon oxides

KW - Surface structure, morphology, roughness, and topography

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=0036467569&partnerID=8YFLogxK

U2 - 10.1016/S0039-6028(01)01728-9

DO - 10.1016/S0039-6028(01)01728-9

M3 - Journal article

AN - SCOPUS:0036467569

VL - 498

SP - 11

EP - 20

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-2

ER -