Resumé
The features of Cs enhanced oxidation of silicon is studied with the quases-Tougaard method. It is found that Cs oxide forms islands on the Si(111) 7×7 surface for exposure up to eight cycles (1 cycle=1 ML Cs+100 L O2). These islands in turn form islands of SiO2 on the surface after annealing. The surface coverage of Cs-oxide islands and silicon-oxide islands is found to be the same. At higher (≥10 cycles) exposures, the Cs oxide as well as the SiO22 layer covers the surface completely. It is also shown, that the catalytic effect of Cs is local and that the amount of produced SiO22 is directly proportional to the amount of Cs.
| Originalsprog | Engelsk |
|---|---|
| Tidsskrift | Surface Science |
| Vol/bind | 498 |
| Udgave nummer | 1-2 |
| Sider (fra-til) | 11-20 |
| Antal sider | 10 |
| ISSN | 0039-6028 |
| DOI | |
| Status | Udgivet - 1. feb. 2002 |
Fingeraftryk
Citer dette
}
Surface morphology of SiO2 on a Si(111) 7×7 surface formed after alternating exposure to caesium and oxygen and subsequent annealing. / Semak, B. S.; Jensen, T.; Takker, L. B.; Morgen, P.; Tougaard, S.
I: Surface Science, Bind 498, Nr. 1-2, 01.02.2002, s. 11-20.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review
TY - JOUR
T1 - Surface morphology of SiO2 on a Si(111) 7×7 surface formed after alternating exposure to caesium and oxygen and subsequent annealing
AU - Semak, B. S.
AU - Jensen, T.
AU - Takker, L. B.
AU - Morgen, P.
AU - Tougaard, S.
PY - 2002/2/1
Y1 - 2002/2/1
N2 - The features of Cs enhanced oxidation of silicon is studied with the quases-Tougaard method. It is found that Cs oxide forms islands on the Si(111) 7×7 surface for exposure up to eight cycles (1 cycle=1 ML Cs+100 L O2). These islands in turn form islands of SiO2 on the surface after annealing. The surface coverage of Cs-oxide islands and silicon-oxide islands is found to be the same. At higher (≥10 cycles) exposures, the Cs oxide as well as the SiO22 layer covers the surface completely. It is also shown, that the catalytic effect of Cs is local and that the amount of produced SiO22 is directly proportional to the amount of Cs.
AB - The features of Cs enhanced oxidation of silicon is studied with the quases-Tougaard method. It is found that Cs oxide forms islands on the Si(111) 7×7 surface for exposure up to eight cycles (1 cycle=1 ML Cs+100 L O2). These islands in turn form islands of SiO2 on the surface after annealing. The surface coverage of Cs-oxide islands and silicon-oxide islands is found to be the same. At higher (≥10 cycles) exposures, the Cs oxide as well as the SiO22 layer covers the surface completely. It is also shown, that the catalytic effect of Cs is local and that the amount of produced SiO22 is directly proportional to the amount of Cs.
KW - Oxidation
KW - Silicon oxides
KW - Surface structure, morphology, roughness, and topography
KW - X-ray photoelectron spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=0036467569&partnerID=8YFLogxK
U2 - 10.1016/S0039-6028(01)01728-9
DO - 10.1016/S0039-6028(01)01728-9
M3 - Journal article
AN - SCOPUS:0036467569
VL - 498
SP - 11
EP - 20
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 1-2
ER -