SURFACE AND INTERFACES OF HGCDTE. WHAT CAN WE LEARN FROM 3-5'S? WHAT IS UNIQUE WITH HGCDTE?

W. E. SPICER*, J. A. SILBERMAN, P. MORGEN, I. LINDAU, J. A. WILSON

*Kontaktforfatter for dette arbejde

Publikation: Bidrag til tidsskriftKonferenceartikelForskningpeer review

Resumé

FOR 3-5'S, A UNIFIED DEFECT MODEL HAS BEEN DEVELOPED WHICH EXPLAINS BOTH THE SCHOTTKY BARRIER FORMATION AND THE SOURCE OF THE MOS INTERFACE STATES. THIS WORK IS BRIEFLY REVIEWED AND RELATED TO HGCDTE SURFACE AND INTERFACE PHENOMENA. BASED ON THIS AND A WIDE RANGE OF PRACTICAL WORK PLUS THE EARLY RESULTS OF FUNDAMENTAL WORK ON HGCDTE IT IS CLEAR THAT DEFECTSALSO PLAY AN IMPORTANT ROLE AT HGCDTE INTERFACES. HOWEVER, IN ALL PREVIOUS WORK IT HAS APPEARED THAT THE INTERFACE MAY NOT BE SO STRONG COUPLED TO DEFECTS IN THE BULK (I. E. TO DEFECTS, DISLOCATIONS, ETC. IN THE BULK); THIS DOES NOT SEEM TO BE THE CASE FOR HGCDTE WHERE THE ″ INTERCOMMUNICATION ″ BETWEEN THE SURFACE AND BULK MAKES IT ESSENTIAL TO TREAT THE SURFACE IN THE CONTEXT OF BULK INTERACTIONS AND IMPERFECTIONS.

OriginalsprogEngelsk
TidsskriftJournal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films
Vol/bind21
Udgave nummer1
Sider (fra-til)149-153
Antal sider5
ISSN1553-1813
StatusUdgivet - 1. jan. 1982
BegivenhedPROC OF THE US WORKSHOP ON THE PHYS AND CHEM OF MERCURY CADMIUM TELLURIDE, 1ST - Minneapolis, MN, USA
Varighed: 28. okt. 198130. okt. 1981

Konference

KonferencePROC OF THE US WORKSHOP ON THE PHYS AND CHEM OF MERCURY CADMIUM TELLURIDE, 1ST
ByMinneapolis, MN, USA
Periode28/10/198130/10/1981

Fingeraftryk

defect
Defects
Interface states
dislocation

Citer dette

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title = "SURFACE AND INTERFACES OF HGCDTE. WHAT CAN WE LEARN FROM 3-5'S? WHAT IS UNIQUE WITH HGCDTE?",
abstract = "FOR 3-5'S, A UNIFIED DEFECT MODEL HAS BEEN DEVELOPED WHICH EXPLAINS BOTH THE SCHOTTKY BARRIER FORMATION AND THE SOURCE OF THE MOS INTERFACE STATES. THIS WORK IS BRIEFLY REVIEWED AND RELATED TO HGCDTE SURFACE AND INTERFACE PHENOMENA. BASED ON THIS AND A WIDE RANGE OF PRACTICAL WORK PLUS THE EARLY RESULTS OF FUNDAMENTAL WORK ON HGCDTE IT IS CLEAR THAT DEFECTSALSO PLAY AN IMPORTANT ROLE AT HGCDTE INTERFACES. HOWEVER, IN ALL PREVIOUS WORK IT HAS APPEARED THAT THE INTERFACE MAY NOT BE SO STRONG COUPLED TO DEFECTS IN THE BULK (I. E. TO DEFECTS, DISLOCATIONS, ETC. IN THE BULK); THIS DOES NOT SEEM TO BE THE CASE FOR HGCDTE WHERE THE ″ INTERCOMMUNICATION ″ BETWEEN THE SURFACE AND BULK MAKES IT ESSENTIAL TO TREAT THE SURFACE IN THE CONTEXT OF BULK INTERACTIONS AND IMPERFECTIONS.",
author = "SPICER, {W. E.} and SILBERMAN, {J. A.} and P. MORGEN and I. LINDAU and WILSON, {J. A.}",
year = "1982",
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SURFACE AND INTERFACES OF HGCDTE. WHAT CAN WE LEARN FROM 3-5'S? WHAT IS UNIQUE WITH HGCDTE? / SPICER, W. E.; SILBERMAN, J. A.; MORGEN, P.; LINDAU, I.; WILSON, J. A.

I: Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films, Bind 21, Nr. 1, 01.01.1982, s. 149-153.

Publikation: Bidrag til tidsskriftKonferenceartikelForskningpeer review

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T1 - SURFACE AND INTERFACES OF HGCDTE. WHAT CAN WE LEARN FROM 3-5'S? WHAT IS UNIQUE WITH HGCDTE?

AU - SPICER, W. E.

AU - SILBERMAN, J. A.

AU - MORGEN, P.

AU - LINDAU, I.

AU - WILSON, J. A.

PY - 1982/1/1

Y1 - 1982/1/1

N2 - FOR 3-5'S, A UNIFIED DEFECT MODEL HAS BEEN DEVELOPED WHICH EXPLAINS BOTH THE SCHOTTKY BARRIER FORMATION AND THE SOURCE OF THE MOS INTERFACE STATES. THIS WORK IS BRIEFLY REVIEWED AND RELATED TO HGCDTE SURFACE AND INTERFACE PHENOMENA. BASED ON THIS AND A WIDE RANGE OF PRACTICAL WORK PLUS THE EARLY RESULTS OF FUNDAMENTAL WORK ON HGCDTE IT IS CLEAR THAT DEFECTSALSO PLAY AN IMPORTANT ROLE AT HGCDTE INTERFACES. HOWEVER, IN ALL PREVIOUS WORK IT HAS APPEARED THAT THE INTERFACE MAY NOT BE SO STRONG COUPLED TO DEFECTS IN THE BULK (I. E. TO DEFECTS, DISLOCATIONS, ETC. IN THE BULK); THIS DOES NOT SEEM TO BE THE CASE FOR HGCDTE WHERE THE ″ INTERCOMMUNICATION ″ BETWEEN THE SURFACE AND BULK MAKES IT ESSENTIAL TO TREAT THE SURFACE IN THE CONTEXT OF BULK INTERACTIONS AND IMPERFECTIONS.

AB - FOR 3-5'S, A UNIFIED DEFECT MODEL HAS BEEN DEVELOPED WHICH EXPLAINS BOTH THE SCHOTTKY BARRIER FORMATION AND THE SOURCE OF THE MOS INTERFACE STATES. THIS WORK IS BRIEFLY REVIEWED AND RELATED TO HGCDTE SURFACE AND INTERFACE PHENOMENA. BASED ON THIS AND A WIDE RANGE OF PRACTICAL WORK PLUS THE EARLY RESULTS OF FUNDAMENTAL WORK ON HGCDTE IT IS CLEAR THAT DEFECTSALSO PLAY AN IMPORTANT ROLE AT HGCDTE INTERFACES. HOWEVER, IN ALL PREVIOUS WORK IT HAS APPEARED THAT THE INTERFACE MAY NOT BE SO STRONG COUPLED TO DEFECTS IN THE BULK (I. E. TO DEFECTS, DISLOCATIONS, ETC. IN THE BULK); THIS DOES NOT SEEM TO BE THE CASE FOR HGCDTE WHERE THE ″ INTERCOMMUNICATION ″ BETWEEN THE SURFACE AND BULK MAKES IT ESSENTIAL TO TREAT THE SURFACE IN THE CONTEXT OF BULK INTERACTIONS AND IMPERFECTIONS.

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JO - Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films

JF - Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films

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