Substrate effects in graphene field-effect transistor photodetectors

K. V. Voronin, G. A. Ermolaev, Y. V. Stebunov, A. V. Arsenin, A. N. Bylinkin, B. B.E. Jensen, B. Jørgensen, V. S. Volkov

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Abstrakt

In present study, we introduce graphene field-effect transistors (G-FET) fabricated on silicon - silicon dioxide wafers and analyse their properties. Electric and photoelectric effects in these devices were experimentally observed and discussed. We demonstrate that the understanding of the processes occurring in the substrate is of high importance not only for the development of all types of photodetectors based on field-effect transistors, but also could be used for the designing of devices with novel functionalities.

OriginalsprogEngelsk
Artikelnummer012188
BogserieJournal of Physics: Conference Series
Vol/bind1461
ISSN1742-6588
DOI
StatusUdgivet - 23. apr. 2020
Begivenhed4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 - St. Petersburg, Rusland
Varighed: 15. jul. 201919. jul. 2019

Konference

Konference4th International Conference on Metamaterials and Nanophotonics, METANANO 2019
Land/OmrådeRusland
BySt. Petersburg
Periode15/07/201919/07/2019
SponsorBruker, INSCIENCE

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