Study on Resonant Gate Driver circuits for high frequency applications

Jaya Venkata Phani Sekhar Chennu; Ramkrishan Maheshwari

doi:10.1109/ICPES.2016.7584074

Study on Resonant Gate Driver circuits for high frequency applications

Jaya Venkata Phani Sekhar Chennu, Ramkrishan Maheshwari

Indian Institute of Technology Delhi

Publikation: Kapitel i bog/rapport/konference-proceeding › Konferencebidrag i proceedings › Forskning › peer review

Abstrakt

This paper presents an overview on advantages and limitations of existing resonant gate drivers for the high-frequency applications. Conventional gate drive circuits dissipate energy in gate resistance and this energy is independent of gate resistance. Instead of dissipating all the energy, some of the energy can be recovered or recycled using the principle of resonance. This paper analyzes various gate drive circuits and presents their advantages and limitations. The gate drive circuits are simulated on LTspice Simulation Software. Simulation results are presented to show the effectiveness of the analysis.

Originalsprog	Engelsk
Titel	2016 IEEE 6th International Conference on Power Systems, ICPS 2016
Forlag	IEEE
Publikationsdato	5. okt. 2016
Artikelnummer	7584074
ISBN (Elektronisk)	9781509001286
DOI	https://doi.org/10.1109/ICPES.2016.7584074
Status	Udgivet - 5. okt. 2016
Begivenhed	6th IEEE International Conference on Power Systems, ICPS 2016 - New Delhi, Indien Varighed: 4. mar. 2016 → 6. mar. 2016

Konference

Konference	6th IEEE International Conference on Power Systems, ICPS 2016
Land/Område	Indien
By	New Delhi
Periode	04/03/2016 → 06/03/2016
Sponsor	BSES Yamuna Power Limited, Department of Science and Technology Govt. of India, DynaFusion, et al., IEEE, Semikron

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10.1109/ICPES.2016.7584074

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Citationsformater

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title = "Study on Resonant Gate Driver circuits for high frequency applications",

abstract = "This paper presents an overview on advantages and limitations of existing resonant gate drivers for the high-frequency applications. Conventional gate drive circuits dissipate energy in gate resistance and this energy is independent of gate resistance. Instead of dissipating all the energy, some of the energy can be recovered or recycled using the principle of resonance. This paper analyzes various gate drive circuits and presents their advantages and limitations. The gate drive circuits are simulated on LTspice Simulation Software. Simulation results are presented to show the effectiveness of the analysis.",

keywords = "Gate-energy recovery, Gate-energy recycling, High frequency, IGBT gate drive, Low power consumption, MOSFET gate drive, Resonant gate driver",

author = "Chennu, {Jaya Venkata Phani Sekhar} and Ramkrishan Maheshwari",

year = "2016",

month = oct,

day = "5",

doi = "10.1109/ICPES.2016.7584074",

language = "English",

booktitle = "2016 IEEE 6th International Conference on Power Systems, ICPS 2016",

publisher = "IEEE",

address = "United States",

note = "6th IEEE International Conference on Power Systems, ICPS 2016 ; Conference date: 04-03-2016 Through 06-03-2016",

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AU - Chennu, Jaya Venkata Phani Sekhar

AU - Maheshwari, Ramkrishan

PY - 2016/10/5

Y1 - 2016/10/5

N2 - This paper presents an overview on advantages and limitations of existing resonant gate drivers for the high-frequency applications. Conventional gate drive circuits dissipate energy in gate resistance and this energy is independent of gate resistance. Instead of dissipating all the energy, some of the energy can be recovered or recycled using the principle of resonance. This paper analyzes various gate drive circuits and presents their advantages and limitations. The gate drive circuits are simulated on LTspice Simulation Software. Simulation results are presented to show the effectiveness of the analysis.

AB - This paper presents an overview on advantages and limitations of existing resonant gate drivers for the high-frequency applications. Conventional gate drive circuits dissipate energy in gate resistance and this energy is independent of gate resistance. Instead of dissipating all the energy, some of the energy can be recovered or recycled using the principle of resonance. This paper analyzes various gate drive circuits and presents their advantages and limitations. The gate drive circuits are simulated on LTspice Simulation Software. Simulation results are presented to show the effectiveness of the analysis.

KW - Gate-energy recovery

KW - Gate-energy recycling

KW - High frequency

KW - IGBT gate drive

KW - Low power consumption

KW - MOSFET gate drive

KW - Resonant gate driver

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U2 - 10.1109/ICPES.2016.7584074

DO - 10.1109/ICPES.2016.7584074

M3 - Article in proceedings

AN - SCOPUS:84994184722

BT - 2016 IEEE 6th International Conference on Power Systems, ICPS 2016

PB - IEEE

T2 - 6th IEEE International Conference on Power Systems, ICPS 2016

Y2 - 4 March 2016 through 6 March 2016

ER -

Study on Resonant Gate Driver circuits for high frequency applications

Abstrakt

Konference

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