Si nanowire phototransistors at telecommunication wavelengths by plasmonenhanced two-photon absorption

Hamidreza Siampour, Yaping Dan

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

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Resumé

The on-chip integration of optical waveguides with complementary metal-oxide-semiconductor (CMOS) transistors is the next generation technology for high-speed communications. The advance of such a technology requires a high-performance photodetector operating at communication wavelengths. However, silicon does not absorb photons at communication wavelengths because of its relatively large bandgap. Growing high quality small bandgap semiconductors on top of silicon is challenging due to lattice mismatch. An all silicon photonic CMOS technology is an attractive option. Here, we demonstrate a highperformance silicon phototransistor that operates at the communication wavelengths by two-photon absorption effect. To turn silicon into a light absorptive material at communication wavelengths, we have designed a sophisticated plasmonic antenna structure to increases the intensity of light in the silicon nanowire by 5 orders of magnitude. At the high light intensity, the light absorption in silicon is dominated by the two-photon absorption effect. The generated photocurrent is further amplified by the Si nanowire phototransistor, a section of which is doped to be a core-shell pn junction. Simulation results indicate that the device can achieve a responsivity of 2.4×104 A/W and a 3-dB bandwidth over 300 GHz. Successful development of such a device is important for the next generation highspeed communication technology.

OriginalsprogEngelsk
TidsskriftOptics Express
Vol/bind24
Udgave nummer5
Sider (fra-til)4601-4609
ISSN1094-4087
DOI
StatusUdgivet - 7. mar. 2016
Udgivet eksterntJa

Fingeraftryk

phototransistors
telecommunication
nanowires
communication
photons
silicon
wavelengths
CMOS
electromagnetic absorption
optical waveguides
luminous intensity
photocurrents
photometers
transistors
antennas
chips
high speed
photonics
bandwidth

Citer dette

Siampour, Hamidreza ; Dan, Yaping. / Si nanowire phototransistors at telecommunication wavelengths by plasmonenhanced two-photon absorption. I: Optics Express. 2016 ; Bind 24, Nr. 5. s. 4601-4609.
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abstract = "The on-chip integration of optical waveguides with complementary metal-oxide-semiconductor (CMOS) transistors is the next generation technology for high-speed communications. The advance of such a technology requires a high-performance photodetector operating at communication wavelengths. However, silicon does not absorb photons at communication wavelengths because of its relatively large bandgap. Growing high quality small bandgap semiconductors on top of silicon is challenging due to lattice mismatch. An all silicon photonic CMOS technology is an attractive option. Here, we demonstrate a highperformance silicon phototransistor that operates at the communication wavelengths by two-photon absorption effect. To turn silicon into a light absorptive material at communication wavelengths, we have designed a sophisticated plasmonic antenna structure to increases the intensity of light in the silicon nanowire by 5 orders of magnitude. At the high light intensity, the light absorption in silicon is dominated by the two-photon absorption effect. The generated photocurrent is further amplified by the Si nanowire phototransistor, a section of which is doped to be a core-shell pn junction. Simulation results indicate that the device can achieve a responsivity of 2.4×104 A/W and a 3-dB bandwidth over 300 GHz. Successful development of such a device is important for the next generation highspeed communication technology.",
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Si nanowire phototransistors at telecommunication wavelengths by plasmonenhanced two-photon absorption. / Siampour, Hamidreza; Dan, Yaping.

I: Optics Express, Bind 24, Nr. 5, 07.03.2016, s. 4601-4609.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

TY - JOUR

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N2 - The on-chip integration of optical waveguides with complementary metal-oxide-semiconductor (CMOS) transistors is the next generation technology for high-speed communications. The advance of such a technology requires a high-performance photodetector operating at communication wavelengths. However, silicon does not absorb photons at communication wavelengths because of its relatively large bandgap. Growing high quality small bandgap semiconductors on top of silicon is challenging due to lattice mismatch. An all silicon photonic CMOS technology is an attractive option. Here, we demonstrate a highperformance silicon phototransistor that operates at the communication wavelengths by two-photon absorption effect. To turn silicon into a light absorptive material at communication wavelengths, we have designed a sophisticated plasmonic antenna structure to increases the intensity of light in the silicon nanowire by 5 orders of magnitude. At the high light intensity, the light absorption in silicon is dominated by the two-photon absorption effect. The generated photocurrent is further amplified by the Si nanowire phototransistor, a section of which is doped to be a core-shell pn junction. Simulation results indicate that the device can achieve a responsivity of 2.4×104 A/W and a 3-dB bandwidth over 300 GHz. Successful development of such a device is important for the next generation highspeed communication technology.

AB - The on-chip integration of optical waveguides with complementary metal-oxide-semiconductor (CMOS) transistors is the next generation technology for high-speed communications. The advance of such a technology requires a high-performance photodetector operating at communication wavelengths. However, silicon does not absorb photons at communication wavelengths because of its relatively large bandgap. Growing high quality small bandgap semiconductors on top of silicon is challenging due to lattice mismatch. An all silicon photonic CMOS technology is an attractive option. Here, we demonstrate a highperformance silicon phototransistor that operates at the communication wavelengths by two-photon absorption effect. To turn silicon into a light absorptive material at communication wavelengths, we have designed a sophisticated plasmonic antenna structure to increases the intensity of light in the silicon nanowire by 5 orders of magnitude. At the high light intensity, the light absorption in silicon is dominated by the two-photon absorption effect. The generated photocurrent is further amplified by the Si nanowire phototransistor, a section of which is doped to be a core-shell pn junction. Simulation results indicate that the device can achieve a responsivity of 2.4×104 A/W and a 3-dB bandwidth over 300 GHz. Successful development of such a device is important for the next generation highspeed communication technology.

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