Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells

Yun Sun*, Shuping Lin, Wei Li, Shiqing Cheng, Yunxiang Zhang, Yiming Liu, Wei Liu

*Kontaktforfatter for dette arbejde

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Resumé

This paper reviews the development history of alkali element doping on Cu(In,Ga)Se2 (CIGS) solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF) post-deposition treatment (PDT), we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+) density, which is transferred from the acceptor defect (VCu) and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.

OriginalsprogEngelsk
TidsskriftOcean Engineering
Vol/bind3
Udgave nummer4
Sider (fra-til)452-459
ISSN0029-8018
DOI
StatusUdgivet - 2017

Fingeraftryk

Chemical elements
Solar cells
Doping (additives)
Open circuit voltage
Buffer layers
Thin films
Defects
Defect density
Valence bands
Delamination
Passivation
Surface structure
Electronic properties
Short circuit currents
Carrier concentration
Evaporation
Grain boundaries
History
Temperature

Citer dette

Sun, Y., Lin, S., Li, W., Cheng, S., Zhang, Y., Liu, Y., & Liu, W. (2017). Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells. Ocean Engineering, 3(4), 452-459. https://doi.org/10.1016/J.ENG.2017.04.020
Sun, Yun ; Lin, Shuping ; Li, Wei ; Cheng, Shiqing ; Zhang, Yunxiang ; Liu, Yiming ; Liu, Wei. / Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells. I: Ocean Engineering. 2017 ; Bind 3, Nr. 4. s. 452-459.
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title = "Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells",
abstract = "This paper reviews the development history of alkali element doping on Cu(In,Ga)Se2 (CIGS) solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF) post-deposition treatment (PDT), we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+) density, which is transferred from the acceptor defect (VCu−) and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.",
keywords = "Alkali elements, Cu(In,Ga)Se, Post-deposition treatment, Thin-film solar cells",
author = "Yun Sun and Shuping Lin and Wei Li and Shiqing Cheng and Yunxiang Zhang and Yiming Liu and Wei Liu",
year = "2017",
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pages = "452--459",
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Sun, Y, Lin, S, Li, W, Cheng, S, Zhang, Y, Liu, Y & Liu, W 2017, 'Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells', Ocean Engineering, bind 3, nr. 4, s. 452-459. https://doi.org/10.1016/J.ENG.2017.04.020

Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells. / Sun, Yun; Lin, Shuping; Li, Wei; Cheng, Shiqing; Zhang, Yunxiang; Liu, Yiming; Liu, Wei.

I: Ocean Engineering, Bind 3, Nr. 4, 2017, s. 452-459.

Publikation: Bidrag til tidsskriftReviewForskningpeer review

TY - JOUR

T1 - Review on Alkali Element Doping in Cu(In,Ga)Se2 Thin Films and Solar Cells

AU - Sun, Yun

AU - Lin, Shuping

AU - Li, Wei

AU - Cheng, Shiqing

AU - Zhang, Yunxiang

AU - Liu, Yiming

AU - Liu, Wei

PY - 2017

Y1 - 2017

N2 - This paper reviews the development history of alkali element doping on Cu(In,Ga)Se2 (CIGS) solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF) post-deposition treatment (PDT), we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+) density, which is transferred from the acceptor defect (VCu−) and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.

AB - This paper reviews the development history of alkali element doping on Cu(In,Ga)Se2 (CIGS) solar cells and summarizes important achievements that have been made in this field. The influences of incorporation strategies on CIGS absorbers and device performances are also reviewed. By analyzing CIGS surface structure and electronic property variation induced by alkali fluoride (NaF and KF) post-deposition treatment (PDT), we discuss and interpret the following issues: ① The delamination of CIGS thin films induced by Na incorporation facilitates CuInSe2 formation and inhibits Ga during low-temperature co-evaporation processes. ② The mechanisms of carrier density increase due to defect passivation by Na at grain boundaries and the surface. ③ A thinner buffer layer improves the short-circuit current without open-circuit voltage loss. This is attributed not only to better buffer layer coverage in the early stage of the chemical bath deposition process, but also to higher donor defect (CdCu+) density, which is transferred from the acceptor defect (VCu−) and strengthens the buried homojunction. ④ The KF-PDT-induced lower valence band maximum at the absorber surface reduces the recombination at the absorber/buffer interface, which improves the open-circuit voltage and the fill factor of solar cells.

KW - Alkali elements

KW - Cu(In,Ga)Se

KW - Post-deposition treatment

KW - Thin-film solar cells

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U2 - 10.1016/J.ENG.2017.04.020

DO - 10.1016/J.ENG.2017.04.020

M3 - Review

VL - 3

SP - 452

EP - 459

JO - Ocean Engineering

JF - Ocean Engineering

SN - 0029-8018

IS - 4

ER -