Reliability modeling of circuits with multi-state aging gates

Sanja Lazarova-Molnar*, Valeriu Beiu

*Kontaktforfatter for dette arbejde

Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Abstrakt

As electronic devices are being scaled towards single digit nanometers, the frequency of errors that such nanocircuits will exhibit is expected to increase sharply. This is both a warning sign and a call to arms for including reliability/yield from the very early circuit design phases as a fourth optimization parameter (besides area, power and speed). In this paper we present an approach for reliability modeling of circuits, where every gate is considered as a discrete stochastic model. These models have (a few) discrete states, including an operating and a faulty state. This allows for treating the aging phenomena of circuits more realistically and obtaining more accurate reliability estimates.

OriginalsprogEngelsk
TitelGrand Challenges in Modeling and Simulation Symposium 2008, GCMS 2008, Part of the 2008 Summer Simulation Multiconference, SummerSim 2008
Antal sider5
Publikationsdato1. dec. 2008
Sider43-47
ISBN (Trykt)9781622763603
StatusUdgivet - 1. dec. 2008
BegivenhedGrand Challenges in Modeling and Simulation Symposium 2008, GCMS 2008, Part of the 2008 Summer Simulation Multiconference, SummerSim 2008 - Edinburgh, Storbritannien
Varighed: 16. jun. 200819. jun. 2008

Konference

KonferenceGrand Challenges in Modeling and Simulation Symposium 2008, GCMS 2008, Part of the 2008 Summer Simulation Multiconference, SummerSim 2008
LandStorbritannien
ByEdinburgh
Periode16/06/200819/06/2008

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