TY - JOUR
T1 - Quantum Depletion of Superconductivity in 3D Diamond Nanowires
AU - Zhang, Gufei
AU - Collienne, Simon
AU - Zulkharnay, Ramiz
AU - Ke, Xiaoxing
AU - Liu, Liwang
AU - Li, Songyu
AU - Zhang, Sen
AU - Zhang, Yongzhe
AU - Li, Yejun
AU - Mortensen, N. Asger
AU - Moshchalkov, Victor V.
AU - Zhu, Jiaqi
AU - Silhanek, Alejandro V.
AU - May, Paul W.
N1 - Publisher Copyright:
© 2024 The Author(s). Advanced Quantum Technologies published by Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - Superconducting nanowires underpin the development of a variety of highly advanced quantum devices such as single-photon detectors and quantum circuits. In 1D superconducting nanowires, topological fluctuations of the superconducting order parameter, known as phase slips, severely influence the electrical transport. In 3D systems, however, phase-slip events are generally considered to be insignificant. Here, details on the observation of a reentrant resistive state in 3D superconducting diamond nanowires (DNWs) are reported. This exotic resistive state alters the trend of the superconducting transition with an abrupt change of the temperature and magnetic-field coefficients of resistivity and the current coefficient of voltage. This reentrant resistive state is interpreted as being a result of quantum phase slips in the bamboo-like DNWs consisting of multiple sequential grain-boundary-grain junctions. The results provide the first evidence that quantum phase slips can also play a crucial role in determining the electrical transport properties of 3D superconducting nanowires.
AB - Superconducting nanowires underpin the development of a variety of highly advanced quantum devices such as single-photon detectors and quantum circuits. In 1D superconducting nanowires, topological fluctuations of the superconducting order parameter, known as phase slips, severely influence the electrical transport. In 3D systems, however, phase-slip events are generally considered to be insignificant. Here, details on the observation of a reentrant resistive state in 3D superconducting diamond nanowires (DNWs) are reported. This exotic resistive state alters the trend of the superconducting transition with an abrupt change of the temperature and magnetic-field coefficients of resistivity and the current coefficient of voltage. This reentrant resistive state is interpreted as being a result of quantum phase slips in the bamboo-like DNWs consisting of multiple sequential grain-boundary-grain junctions. The results provide the first evidence that quantum phase slips can also play a crucial role in determining the electrical transport properties of 3D superconducting nanowires.
KW - diamond nanowires
KW - grain-boundary-grain junctions
KW - negative magnetoresistance
KW - quantum phase slips
KW - reentrant resistive state
U2 - 10.1002/qute.202400476
DO - 10.1002/qute.202400476
M3 - Journal article
AN - SCOPUS:85211904381
SN - 2511-9044
JO - Advanced Quantum Technologies
JF - Advanced Quantum Technologies
ER -