Potential efficiency improvement of Cu (In, Ga) Se2 thin-film solar cells by the window layer optimization

I. Gharibshahian; S. Sharbati; A.A. Orouji

doi:10.1016/j.tsf.2018.04.014

Potential efficiency improvement of Cu (In, Ga) Se₂ thin-film solar cells by the window layer optimization

I. Gharibshahian, S. Sharbati, A.A. Orouji

Semnan University

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

Abstract

In this paper, an initial model based on a CIGS experimental device has been established. Afterwards, the conventional i-ZnO layer replaced by ZnO_1-xS_x or Zn₁-_yMg_yO layers as window layer and the solar cell performance analyzed. The estimated optical bandgap (Eg) of Zn_1-yMg_yO material is linearly enhanced from 3.3 eV for pure ZnO to 4.1 eV for Zn_0.6Mg_0.4O. Also, Eg for ZnO_1-xS_x material is variable between 2.83 eV–3.76 eV that is wider than pure ZnO. The AlZnO/ZnO_1-xS_x/CdS/CIGS structure when 0.4 < x < 0.6 and the AlZnO/Zn_1-yMg_yO/CdS/CIGS structure when 0.055 < y < 0.2 are the proposed solar cells with 21.15% efficiency.

Originalsprog	Engelsk
Tidsskrift	Thin Solid Films
Vol/bind	655
Sider (fra-til)	95-104
ISSN	0040-6090
DOI	https://doi.org/10.1016/j.tsf.2018.04.014
Status	Udgivet - 1. jun. 2018
Udgivet eksternt	Ja

Dokumenter og links

10.1016/j.tsf.2018.04.014

SDU link

Tjek adgangen til materialet i Syddansk Universitetsbiblioteks søgemaskine

Citationsformater

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title = "Potential efficiency improvement of Cu (In, Ga) Se2 thin-film solar cells by the window layer optimization",

abstract = "In this paper, an initial model based on a CIGS experimental device has been established. Afterwards, the conventional i-ZnO layer replaced by ZnO1-xSx or Zn1-yMgyO layers as window layer and the solar cell performance analyzed. The estimated optical bandgap (Eg) of Zn1-yMgyO material is linearly enhanced from 3.3 eV for pure ZnO to 4.1 eV for Zn0.6Mg0.4O. Also, Eg for ZnO1-xSx material is variable between 2.83 eV–3.76 eV that is wider than pure ZnO. The AlZnO/ZnO1-xSx/CdS/CIGS structure when 0.4 < x < 0.6 and the AlZnO/Zn1-yMgyO/CdS/CIGS structure when 0.055 < y < 0.2 are the proposed solar cells with 21.15% efficiency.",

author = "I. Gharibshahian and S. Sharbati and A.A. Orouji",

year = "2018",

month = jun,

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doi = "10.1016/j.tsf.2018.04.014",

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T1 - Potential efficiency improvement of Cu (In, Ga) Se2 thin-film solar cells by the window layer optimization

AU - Gharibshahian, I.

AU - Sharbati, S.

AU - Orouji, A.A.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - In this paper, an initial model based on a CIGS experimental device has been established. Afterwards, the conventional i-ZnO layer replaced by ZnO1-xSx or Zn1-yMgyO layers as window layer and the solar cell performance analyzed. The estimated optical bandgap (Eg) of Zn1-yMgyO material is linearly enhanced from 3.3 eV for pure ZnO to 4.1 eV for Zn0.6Mg0.4O. Also, Eg for ZnO1-xSx material is variable between 2.83 eV–3.76 eV that is wider than pure ZnO. The AlZnO/ZnO1-xSx/CdS/CIGS structure when 0.4 < x < 0.6 and the AlZnO/Zn1-yMgyO/CdS/CIGS structure when 0.055 < y < 0.2 are the proposed solar cells with 21.15% efficiency.

AB - In this paper, an initial model based on a CIGS experimental device has been established. Afterwards, the conventional i-ZnO layer replaced by ZnO1-xSx or Zn1-yMgyO layers as window layer and the solar cell performance analyzed. The estimated optical bandgap (Eg) of Zn1-yMgyO material is linearly enhanced from 3.3 eV for pure ZnO to 4.1 eV for Zn0.6Mg0.4O. Also, Eg for ZnO1-xSx material is variable between 2.83 eV–3.76 eV that is wider than pure ZnO. The AlZnO/ZnO1-xSx/CdS/CIGS structure when 0.4 < x < 0.6 and the AlZnO/Zn1-yMgyO/CdS/CIGS structure when 0.055 < y < 0.2 are the proposed solar cells with 21.15% efficiency.

U2 - 10.1016/j.tsf.2018.04.014

DO - 10.1016/j.tsf.2018.04.014

M3 - Journal article

SN - 0040-6090

VL - 655

SP - 95

EP - 104

JO - Thin Solid Films

JF - Thin Solid Films