Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

Shaobo Li, Zhaofeng Wang, Hanmei Jiang, Limei Zhang, Jingzheng Ren, Mingtao Zheng, Lichun Dong, Luyi Sun

Publikation: Bidrag til tidsskriftLetterForskningpeer review

Resumé

In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.
OriginalsprogEngelsk
TidsskriftChemical Communications
Vol/bind52
Udgave nummer73
Sider (fra-til)10988-10991
ISSN1359-7345
DOI
StatusUdgivet - 2016

Fingeraftryk

Boron
Graphite
Oxides
Graphene
Plasmas
Capacitance
Doping (additives)
Supercapacitor

Citer dette

Li, Shaobo ; Wang, Zhaofeng ; Jiang, Hanmei ; Zhang, Limei ; Ren, Jingzheng ; Zheng, Mingtao ; Dong, Lichun ; Sun, Luyi. / Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors. I: Chemical Communications. 2016 ; Bind 52, Nr. 73. s. 10988-10991.
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title = "Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors",
abstract = "In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at{\%}) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.",
author = "Shaobo Li and Zhaofeng Wang and Hanmei Jiang and Limei Zhang and Jingzheng Ren and Mingtao Zheng and Lichun Dong and Luyi Sun",
year = "2016",
doi = "10.1039/C6CC04052G",
language = "English",
volume = "52",
pages = "10988--10991",
journal = "Chemical Communications",
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Li, S, Wang, Z, Jiang, H, Zhang, L, Ren, J, Zheng, M, Dong, L & Sun, L 2016, 'Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors', Chemical Communications, bind 52, nr. 73, s. 10988-10991. https://doi.org/10.1039/C6CC04052G

Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors. / Li, Shaobo; Wang, Zhaofeng; Jiang, Hanmei; Zhang, Limei; Ren, Jingzheng; Zheng, Mingtao; Dong, Lichun; Sun, Luyi.

I: Chemical Communications, Bind 52, Nr. 73, 2016, s. 10988-10991.

Publikation: Bidrag til tidsskriftLetterForskningpeer review

TY - JOUR

T1 - Plasma-induced high efficient synthesis of boron doped reduced graphene oxide for supercapacitors

AU - Li, Shaobo

AU - Wang, Zhaofeng

AU - Jiang, Hanmei

AU - Zhang, Limei

AU - Ren, Jingzheng

AU - Zheng, Mingtao

AU - Dong, Lichun

AU - Sun, Luyi

PY - 2016

Y1 - 2016

N2 - In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

AB - In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.

U2 - 10.1039/C6CC04052G

DO - 10.1039/C6CC04052G

M3 - Letter

VL - 52

SP - 10988

EP - 10991

JO - Chemical Communications

JF - Chemical Communications

SN - 1359-7345

IS - 73

ER -