Photogating in graphene field-effect phototransistors: Theory and observations

K. V. Voronin*, G. A. Ermolaev, Y. V. Stebunov, A. V. Arsenin, A. N. Bylinkin, B. B.E. Jensen, B. Jørgensen, V. S. Volkov

*Kontaktforfatter for dette arbejde

Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Abstrakt

In this work, we investigate graphene field-effect phototransistor based on photogating. We discuss the theory of this effect and predict such characteristics as the dependence of photoresponse on the gate voltage. To verify our considerations, we fabricate devices on different semiconductor substrates (silicon, germanium or gallium arsenide) and measure their properties. We demonstrate that photogating reveals opportunities for the development of highly sensitive broadband photodetectors from ultraviolet to mid-infrared ranges.

OriginalsprogEngelsk
TitelProceedings of International Congress on Graphene, 2D Materials and Applications, 2D MATERIALS 2019
RedaktørerValentyn Volkov, Alexey Nikitin, Aleksey V. Arsenin
ForlagAmerican Institute of Physics Inc.
Publikationsdato22. jun. 2021
Artikelnummer020034
ISBN (Elektronisk)9780735441033
DOI
StatusUdgivet - 22. jun. 2021
Begivenhed1st International Congress on Graphene, 2D Materials and Applications, 2D MATERIALS 2019 - Sochi, Rusland
Varighed: 30. sep. 20194. okt. 2019

Konference

Konference1st International Congress on Graphene, 2D Materials and Applications, 2D MATERIALS 2019
LandRusland
BySochi
Periode30/09/201904/10/2019
SponsorBeijing Graphene Institute, IMC Industrial Monitoring and Control, Neaspec GmbH
NavnAIP Conference Proceedings
Nummer1
Vol/bind2359
ISSN0094-243X

Bibliografisk note

Funding Information:
This research was funded by Russian Foundation for Basic Research (grants no. 18-37-20061, 18-07-01379, 18-29-02089 and 18-37-00302) We thank Prof. Victor Ryzhii and Dr. Dmitry Svintsov for fruitful discussions. We thank the Shared Facilities Center of the Moscow Institute of Physics and Technology (grant no. RFMEFI59417X0014) and Newtec Engineering A/S for the use of their equipment.

Publisher Copyright:
© 2021 Author(s).

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