Optimize parameters of new fabricated n-CdTe/p-CdTe solar cell

A. Geravand, S. Sharbati, M. Danaie

Publikation: Kapitel i bog/rapport/konference-proceedingKonferencebidrag i proceedingsForskningpeer review

Abstrakt

In this investigation, a new fabricated thin film solar cell with FTO/n-CdS/n-CdTe/p-CdTe/Au structure is modeled. The modeled device is compared with experimental data. Bring in n-CdTe at front of the absorber separate main electric field (buried junction) from heterojunction. Parameters of this new structure is optimized by physical analyses to achieve highest efficiency. The investigated properties in this structure are included: position of n-CdTe/p-CdTe buried junction, doping density of n-CdTe and p-CdTe layers. The efficiency of n-CdTe/p-CdTe cell improves from 15.3% to 19.7%, by optimization of buried junction position and doping density of absorber layers.
OriginalsprogEngelsk
Titel2017 25th Iranian Conference on Electrical Engineering, ICEE 2017
ForlagIEEE
Publikationsdato19. jul. 2017
Sider412-416
Artikelnummer7985484
ISBN (Trykt)978-1-5090-5964-5
ISBN (Elektronisk)9781509059638
DOI
StatusUdgivet - 19. jul. 2017
Udgivet eksterntJa
Begivenhed2017 Iranian Conference on Electrical Engineering - Tehran, Iran
Varighed: 2. maj 20174. maj 2017

Konference

Konference2017 Iranian Conference on Electrical Engineering
Land/OmrådeIran
ByTehran
Periode02/05/201704/05/2017

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