Optically Stimulated Intersubband Absorption in Undoped Amorphous Si/SiO2 Quantum Well

Ole Keller, M. Xiao, Sergei I. Bozhevolnyi

Publikation: Bidrag til tidsskriftTidsskriftartikelFormidling

Resumé

Intersubband absorption has been observed in undoped amorphous multiple‐quantum‐well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non‐equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne ≈ 1013 cm−3) in the ground conduction subband.
OriginalsprogEngelsk
TidsskriftAdvanced Materials for Optics and Electronics
Vol/bind4
Sider (fra-til)417-421
ISSN1057-9257
DOI
StatusUdgivet - 1994
Udgivet eksterntJa

Fingeraftryk

Semiconductor quantum wells
Electrons
Optical pumping
Full width at half maximum
Conduction bands
Absorption spectra
Conservation
Momentum
Crystalline materials

Citer dette

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title = "Optically Stimulated Intersubband Absorption in Undoped Amorphous Si/SiO2 Quantum Well",
abstract = "Intersubband absorption has been observed in undoped amorphous multiple‐quantum‐well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non‐equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne ≈ 1013 cm−3) in the ground conduction subband.",
author = "Ole Keller and M. Xiao and Bozhevolnyi, {Sergei I.}",
year = "1994",
doi = "10.1002/amo.860040606",
language = "English",
volume = "4",
pages = "417--421",
journal = "Advanced Functional Materials",
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Optically Stimulated Intersubband Absorption in Undoped Amorphous Si/SiO2 Quantum Well. / Keller, Ole; Xiao, M.; Bozhevolnyi, Sergei I.

I: Advanced Materials for Optics and Electronics, Bind 4, 1994, s. 417-421.

Publikation: Bidrag til tidsskriftTidsskriftartikelFormidling

TY - JOUR

T1 - Optically Stimulated Intersubband Absorption in Undoped Amorphous Si/SiO2 Quantum Well

AU - Keller, Ole

AU - Xiao, M.

AU - Bozhevolnyi, Sergei I.

PY - 1994

Y1 - 1994

N2 - Intersubband absorption has been observed in undoped amorphous multiple‐quantum‐well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non‐equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne ≈ 1013 cm−3) in the ground conduction subband.

AB - Intersubband absorption has been observed in undoped amorphous multiple‐quantum‐well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non‐equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne ≈ 1013 cm−3) in the ground conduction subband.

U2 - 10.1002/amo.860040606

DO - 10.1002/amo.860040606

M3 - Journal article

VL - 4

SP - 417

EP - 421

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

ER -