Observation of changes in the electronic density of states at a Si (111) surface during adsorption of oxygen by Auger electron spectroscopy

P. Morgen*, J. H. Onsgaard, S. Tougaard

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Abstrakt

The adsorption of oxygen on a Si (111) surface is accompanied by significant changes in the local electronic densities of states. These effects have been monitored as changes in the spectral distribution of emitted L 2,3 VV Auger electrons from pure and oxygen-covered surfaces. Oxygen coverages varying from 0 to slightly below monolayer coverage (237L) have been employed. The present results are compared with data from recent sputter-profiling studies of the Si-SiO2 interface, showing similar behaviors in the two types of experiments.

OriginalsprogEngelsk
TidsskriftApplied Physics Letters
Vol/bind34
Udgave nummer8
Sider (fra-til)488-490
Antal sider3
ISSN0003-6951
DOI
StatusUdgivet - 1. dec. 1979

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